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BC848UC

Description
TRANSISTOR,BJT,NPN,30V V(BR)CEO,100MA I(C),SOT-323
CategoryDiscrete semiconductor    The transistor   
File Size263KB,4 Pages
ManufacturerKODENSHI AUK
Websitehttp://auk.co.kr/
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BC848UC Overview

TRANSISTOR,BJT,NPN,30V V(BR)CEO,100MA I(C),SOT-323

BC848UC Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)420
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
surface mountYES
Base Number Matches1
BC848U
NPN Silicon Transistor
Descriptions
General purpose application
Switching application
PIN Connection
Features
High voltage : V
CEO
=30V
Complementary pair with BC858U
1
2
3
Ordering Information
Type NO.
BC848U
Marking
BS
□ □
① ②
①Device
Code
②hFE
Rank
③Year&Week
Code
SOT-323
Package Code
SOT-323
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
30
5
100
200
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Emitter breakdown voltage
Base-Emitter turn on voltage
Base-Emitter saturation voltage
Collector-Emitter saturation voltage
Collector cut-off current
DC current gain
Transition frequency
Collector output capacitance
Noise figure
(Ta=25°C)
Symbol
BV
CEO
V
BE(ON)
V
BE(sat)
V
CE(sat)
I
CBO
h
FE
*
f
T
C
ob
NF
Test Condition
I
C
=1mA, I
B
=0
V
CE
=5V, I
C
=2mA
I
C
=100mA, I
B
=5mA
I
C
=100mA, I
B
=5mA
V
CB
=35V, I
E
=0
V
CE
=5V, I
C
=2mA
V
CE
=5V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=5V, I
C
=200μA,
f=1KHz, Rg=2KΩ
Min.
30
550
-
-
-
110
-
-
-
Typ. Max.
-
-
900
-
-
-
150
-
-
-
700
-
600
15
800
-
4.5
10
Unit
V
mV
mV
mV
nA
-
MHz
pF
dB
* : h
FE
rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
KSD-T5D031-000
1

BC848UC Related Products

BC848UC BC848UB
Description TRANSISTOR,BJT,NPN,30V V(BR)CEO,100MA I(C),SOT-323 TRANSISTOR,BJT,NPN,30V V(BR)CEO,100MA I(C),SOT-323
Reach Compliance Code unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A
Configuration Single Single
Minimum DC current gain (hFE) 420 200
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.2 W 0.2 W
surface mount YES YES
Base Number Matches 1 1
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