BUW58 datasheet, PDF - EEWORLD Datasheet

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BUW58: DescriptionPower Bipolar Transistor, 20A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,; CategoryDiscrete semiconductor The transistor; File Size92KB，2 Pages; ManufacturerSolitron Devices Inc.

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BUW58 Overview

Power Bipolar Transistor, 20A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,

BUW58 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	20 A
Collector-emitter maximum voltage	160 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	120 W
Maximum power dissipation(Abs)	120 W
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	15 MHz
VCEsat-Max	1.5 V
Base Number Matches	1

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BUW58 Related Products

	BUW58	BLX87	BUW57
Description	Power Bipolar Transistor, 20A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 20A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
Is it lead-free?	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	20 A	20 A	20 A
Collector-emitter maximum voltage	160 V	100 V	125 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	30	10
JEDEC-95 code	TO-3	TO-3	TO-3
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1
Number of terminals	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN
Maximum power consumption environment	120 W	175 W	120 W
Maximum power dissipation(Abs)	120 W	175 W	120 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	15 MHz	10 MHz	15 MHz
VCEsat-Max	1.5 V	0.5 V	1.5 V
Maker	-	Solitron Devices Inc.	Solitron Devices Inc.

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