Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Solitron Devices Inc. |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 20 A |
| Collector-emitter maximum voltage | 100 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 30 |
| JEDEC-95 code | TO-3 |
| JESD-30 code | O-MBFM-P2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 175 W |
| Maximum power dissipation(Abs) | 175 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 10 MHz |
| VCEsat-Max | 0.5 V |
| BLX87 | BUW58 | BUW57 | |
|---|---|---|---|
| Description | Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 20A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | Power Bipolar Transistor, 20A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, |
| Is it lead-free? | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 20 A | 20 A | 20 A |
| Collector-emitter maximum voltage | 100 V | 160 V | 125 V |
| Configuration | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 30 | 10 | 10 |
| JEDEC-95 code | TO-3 | TO-3 | TO-3 |
| JESD-30 code | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C |
| Package body material | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | NPN | NPN | NPN |
| Maximum power consumption environment | 175 W | 120 W | 120 W |
| Maximum power dissipation(Abs) | 175 W | 120 W | 120 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO |
| Terminal form | PIN/PEG | PIN/PEG | PIN/PEG |
| Terminal location | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 10 MHz | 15 MHz | 15 MHz |
| VCEsat-Max | 0.5 V | 1.5 V | 1.5 V |
| Maker | Solitron Devices Inc. | - | Solitron Devices Inc. |
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