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BUV37

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size225KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

BUV37 Overview

Transistor

BUV37 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUV37
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 400V(Min.)
·Low
Collector Saturation Voltage-
: V
CE(sat)
= 2.0V(Max.)@ I
C
= 10A
APPLICATIONS
·Designed
for use in automotive ignition circuits.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current- Continuous
Collector Current-Peak
Base Current - Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
w
.cn
i
em
cs
.is
w
w
VALUE
600
UNIT
V
400
8
V
V
15
A
30
4
100
150
-65~150
A
A
W
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.25
UNIT
℃/W
isc Website:www.iscsemi.cn
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