INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUV37
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 400V(Min.)
·Low
Collector Saturation Voltage-
: V
CE(sat)
= 2.0V(Max.)@ I
C
= 10A
APPLICATIONS
·Designed
for use in automotive ignition circuits.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current- Continuous
Collector Current-Peak
Base Current - Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
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w
VALUE
600
UNIT
V
400
8
V
V
15
A
30
4
100
150
-65~150
A
A
W
℃
℃
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.25
UNIT
℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
BUV37
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 5A; I
B
= 0; L= 15mH
B
400
V
V
CE
(sat)-1
Collector-Emitter Saturation Voltage
I
C
= 7 A; I
B
= 70mA
1.5
V
V
CE
(sat)-2
Collector-Emitter Saturation Voltage
I
C
= 10 A; I
B
= 150mA
B
2.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 10 A; I
B
= 150mA
B
2.7
V
I
CEO
Collector Cutoff Current
V
CE
= 400V; I
B
= 0
0.25
mA
I
EBO
Emitter Cutoff Current
h
FE
DC Current Gain
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V
EB
= 6V; I
C
= 0
I
C
= 15A; V
CE
= 5V
20
40
mA
isc Website:www.iscsemi.cn