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BDV65

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size367KB,8 Pages
ManufacturerNorth American Philips Discrete Products Div
Download Datasheet Parametric Compare View All

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BDV65 Overview

Transistor,

BDV65 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)12 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)125 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

BDV65 Related Products

BDV65 BDV65A BDV65C BDV65B
Description Transistor, Transistor, Transistor, Transistor,
Is it Rohs certified? incompatible incompatible incompatible incompatible
Reach Compliance Code unknown unknown unknown unknown
Maximum collector current (IC) 12 A 12 A 12 A 12 A
Configuration DARLINGTON DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 1000 1000 1000 1000
JESD-609 code e0 e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 125 W 125 W 125 W 125 W
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maker - North American Philips Discrete Products Div North American Philips Discrete Products Div North American Philips Discrete Products Div
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