Jftifij
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,
LJnc,
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BSS74
MECHANICAL DATA
Dimensions in mm (inches)
-5.84(0.230),
4.95(0.195)
4.52(0.178)
HIGH VOLTAGE
PNP SILICON
TRANSISTOR
01
T-
0,0,
FEATURES
• Hermetic Metal Package
• Screening Options Available
0.48 (0.019)
0.41 (0.016)
dia.
2.54(0.100)
Nonr
'
1
TO-18 (TO-206AA) PACKAGE
PIN 1 - Emitter
PIN 2-Base
PIN 3 - Collector
ABSOLUTE MAXIMUM RATINGS
(T
c
=
25°C unless otherwise stated)
V
CBO
V
CEO
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Continuous Collector Current
Total Device Dissipation
Total Device Dissipation
T
A
= 25°C
Derate above 25
q
C
T
c
= 25°C
Derate above 25°C
-200V
-200V
-5V
-0.5A
0.5W
2.86mW/°C
2.5W
14.3mW/°C
-65 to 200°C
70°C/W
VEBO
Ic
PD
PD
T
J
'
T
STG
Operating Junction & Storage Temperature Range
Thermal Resistance, Junction - Case
R
eJC
Quality Semi-Conductors
BSS74
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
Parameter
V(BR)CEO
\/(BR)CBO
V(BR)EBO
I
CBO
I
CEO
IEBO
Test Conditions
Min.
-200
-200
-6
-50
nA
V
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
l
c
= -10mA
Collector - Base Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
ON CHARACTERISTICS
V
CE
= -1V
l
c
= -100nA
l
E
= 100u.A
V
CB
= -150V
V
CE
= -150V
V
BE
= -5V
IB = 0
I
E
= 0
l
c
= 0
I
E
= 0
I
B
= 0
|
c
= 0
-500
-50
l
c
= -0.1mA
l
c
= -1mA
l
c
= -10mA
20
30
35
35
40
45
50
55
150
-0.3
-0.4
-0.8
-0.9
V
—
h
r
FF
L
DC Current Gain
V
CE
= -10V
V
CE
= -10V
V
V_f C
= -10V
CE
v
CE(sat)
l
\*r
= -30mA
c
!
B
= -1mA
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
l
c
= -10mA
l
c
= -30mA
l
O
= -10mA
c
I
B
= -3mA
ID = -1mA
D
^BE(sat)
l
c
= -30mA
l
c
= -20mA
f= 20MHz
I
C
= 0
E
f = 1MHz
u=o
O
v
I
B
= -3mA
V
CE
= -20V
V
\sO
= -20V
CB
V
FR
= -0.5V
CD
V
f
T
1
C
ob
C
ib
t
on
!.,«
UN
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Turn-On Time
Turn-Off Time
50
110
3.5
200
MHz
pF
45
f = 1MHz
I
B1
= -10mA
V
cc
- 100V
l
c
= -50mA
In — -50mA
^
100
no — -10mA
OZ
V
CC
= -100V
ns
400
Pulse Test: t
D
< SOO^s , d < 2%.
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