BUL52B
MECHANICAL DATA
Dimensions in mm
10.2
1.3
4.5
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
Designed for use in
electronic ballast applications
•
•
•
•
•
0.5
6.3
3.6 Dia.
15.1
1 2 3
1.3
14.0
0.85
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
MILITARY AND HI–REL VERSIONS
AVAILABLE IN METAL AND CERAMIC
SURFACE MOUNT PACKAGES
15.1
FEATURES
2.54
5.08
TO220
Pin 1 – Base
Pin 2 – Collector
Pin 3 – Emitter
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
T
stg
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Operating and Storage Temperature Range
800V
400V
10V
8A
12A
4A
100W
–55 to +150°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and
reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that
datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5273
Issue 1
BUL52B
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
Test Conditions
Min.
400
800
10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
Collector – Emitter Sustaining Voltage I
C
= 10mA
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base Cut–Off Current
Collector – Emitter Cut–Off Current
Emitter Cut–Off Current
I
C
= 1mA
I
E
= 1mA
V
CB
= 800V
T
C
= 125°C
I
B
= 0
V
EB
= 9V
I
C
= 0
I
C
= 100mA
I
C
= 1A
I
C
= 3A
I
C
= 100mA
T
C
= 125°C
V
CE
= 5V
V
CE
= 5V
V
CE
= 1V
T
C
= 125°C
I
B
= 20mA
I
B
= 0.2A
I
B
= 0.4A
I
B
= 0.6A
I
B
= 0.2A
I
B
= 0.4A
I
B
= 0.6A
V
CE
= 4V
f = 1MHz
I
C
= 1A
I
C
= 2A
I
C
= 3A
I
C
= 1A
V
CE
= 400V
V
10
100
100
10
100
µA
µA
µA
20
15
10
5
30
25
15
0.05
0.1
0.15
0.3
0.8
0.9
0.95
20
40
0.1
0.2
0.3
0.5
1.0
1.1
1.2
MHz
pF
V
V
60
—
h
FE*
DC Current Gain
V
CE(sat)*
Collector – Emitter Saturation Voltage
V
BE(sat)*
Base – Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Transition Frequency
Output Capacitance
I
C
= 2A
I
C
= 3A
f
t
C
ob
I
C
= 0.2A
V
CB
= 20V
* Pulse test t
p
= 300µs ,
δ
< 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and
reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that
datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5273
Issue 1
Real-time operating system RTOS
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