BS616LV8017EA70 datasheet, PDF

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BS616LV8017EA70: DescriptionStandard SRAM, 512KX16, 70ns, CMOS, PDSO44, TSOP2-44; Categorystorage storage; File Size202KB，11 Pages; ManufacturerBrilliance

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BS616LV8017EA70 Overview

Standard SRAM, 512KX16, 70ns, CMOS, PDSO44, TSOP2-44

BS616LV8017EA70 Parametric

Parameter Name	Attribute value
Parts packaging code	TSOP2
package instruction	TSOP2,
Contacts	44
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	70 ns
JESD-30 code	R-PDSO-G44
length	18.41 mm
memory density	8388608 bit
Memory IC Type	STANDARD SRAM
memory width	16
Number of functions	1
Number of terminals	44
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
organize	512KX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	2.4 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	AUTOMOTIVE
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
width	10.16 mm
Base Number Matches	1

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Very Low Power CMOS SRAM

512K X 16 bit

Pb-Free and Green package materials are compliant to RoHS

BS616LV8017

FEATURES

Wide V

operation voltage : 2.4V ~ 5.5V

Very low power consumption :

= 3.0V

Operation current : 25mA (Max.) at 70ns

2mA (Max.) at 1MHz

Standby current : 0.8uA (Typ.) at 25

= 5.0V

Operation current : 61mA (Max.) at 70ns

10mA (Max.) at 1MHz

Standby current : 3.5uA (Typ.) at 25

High speed access time :

-70

70ns(Max.) at V

=2.7~5.5V

Automatic power down when chip is deselected

Easy expansion with CE and OE options

I/O Configuration x8/x16 selectable by LB and UB pin.

Three state outputs and TTL compatible

Fully static operation

Data retention supply voltage as low as 1.5V

DESCRIPTION

The BS616LV8017 is a high performance, very low power CMOS

Static Random Access Memory organized as 524,288 by 16 bits and

operates form a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both

high speed and low power features with typical CMOS standby

current of 0.8uA at 3.0V/25

C and maximum access time of 70ns at

2.7V/125

Easy memory expansion is provided by an active LOW chip enable

(CE) and active LOW output enable (OE) and three-state output

drivers.

The BS616LV8017 has an automatic power down feature, reducing

the power consumption significantly when chip is deselected.

The BS616LV8017 is available in DICE form, JEDEC standard

44-pin TSOP II and 48-ball BGA package.

POWER CONSUMPTION

POWER DISSIPATION

PRODUCT

FAMILY

BS616LV8017EA

BS616LV8017FA

OPERATING

TEMPERATURE

Automotive

Grade

-40 C to +125

STANDBY

CCSB1

, Typ.)

CCSB1

, Max)

Operating

, Max)

PKG TYPE

=5.0V

=3.0V

=5.0V

=3.0V

=5.0V

1MHz

Max.

=3.0V

1MHz

Max.

TSOP II-44

50uA

8.0uA

110uA

60uA

10mA

61mA

2mA

25mA

BGA-48-0912

PIN CONFIGURATIONS

DQ0

DQ1

DQ2

DQ3

VCC

VSS

DQ4

DQ5

DQ6

DQ7

A18

A17

A16

A15

A14

DQ15

DQ14

DQ13

DQ12

VSS

VCC

DQ11

DQ10

DQ9

DQ8

A10

A11

A12

A13

BLOCK DIAGRAM

BS616LV8017EC

BS616LV8017EI

A13

A12

A11

A10

Address

Input

Buffer

Row

Decoder

1024

Memory Array

1024 x 8192

8192

DQ0

DQ15

Data

Input

Buffer

512

Column Decoder

Address Input Buffer

Column I/O

Write Driver

Sense Amp

VSS

VCC

D14

D15

A18

D10

D11

D12

D13

A17

A14

A12

A16

A15

A13

A10

A11

VCC

VSS

Data

Output

Buffer

Control

A14 A15 A16 A17 A18 A0 A1 A2 A3

48-ball BGA top view

Brilliance Semiconductor, Inc.

reserves the right to change products and specifications without notice.

R0201-BS616LV8017A

Revision 2.2A

Mar.

2006

BS616LV8017EA70 Related Products

	BS616LV8017EA70	BS616LV8017FA70	BS616LV8017FAG70	BS616LV8017EAG70
Description	Standard SRAM, 512KX16, 70ns, CMOS, PDSO44, TSOP2-44	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 9 X 12 MM, BGA-48	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 9 X 12 MM, GREEN, BGA-48	Standard SRAM, 512KX16, 70ns, CMOS, PDSO44, GREEN, TSOP2-44
Parts packaging code	TSOP2	BGA	BGA	TSOP2
package instruction	TSOP2,	TFBGA,	TFBGA,	TSOP2,
Contacts	44	48	48	44
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	70 ns	70 ns	70 ns	70 ns
JESD-30 code	R-PDSO-G44	R-PBGA-B48	R-PBGA-B48	R-PDSO-G44
length	18.41 mm	12 mm	12 mm	18.41 mm
memory density	8388608 bit	8388608 bit	8388608 bit	8388608 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	16	16	16	16
Number of functions	1	1	1	1
Number of terminals	44	48	48	44
word count	524288 words	524288 words	524288 words	524288 words
character code	512000	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
organize	512KX16	512KX16	512KX16	512KX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	TFBGA	TFBGA	TSOP2
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	2.4 V	2.4 V	2.4 V	2.4 V
Nominal supply voltage (Vsup)	3 V	3 V	3 V	3 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE
Terminal form	GULL WING	BALL	BALL	GULL WING
Terminal pitch	0.8 mm	0.75 mm	0.75 mm	0.8 mm
Terminal location	DUAL	BOTTOM	BOTTOM	DUAL
width	10.16 mm	9 mm	9 mm	10.16 mm
Base Number Matches	1	1	1	1

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