BDS16SMD datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> BDS16SMD

Preview

BDS16SMD: Description8A, 120V, NPN, Si, POWER TRANSISTOR, TO-276AB, CERAMIC, SMD1, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size21KB，2 Pages; ManufacturerSEMELAB

Download Datasheet Parametric Compare View All

BDS16SMD Overview

8A, 120V, NPN, Si, POWER TRANSISTOR, TO-276AB, CERAMIC, SMD1, 3 PIN

BDS16SMD Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	TO-276AB
package instruction	CHIP CARRIER, R-CBCC-N3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	COLLECTOR
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-276AB
JESD-30 code	R-CBCC-N3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
Base Number Matches	1

Preview

Download Datasheet

View All

BDS16 BDS16SMD

BDS17 BDS17SMD

MECHANICAL DATA

Dimensions in mm

1 0.6

0.8

4.6

16.5

3.6

Dia.

1 3 .5

1 0 .6

SILICON NPN

EPITAXIAL BASE

IN TO220 METAL AND

SMD1 CERAMIC SURFACE

MOUNT PACKAGES

FEATURES

1 23

1 3 .7 0

1.0

2 .5 4

BSC

0 .8 9

(0 .0 3 5 )

m in .

3 .7 0 (0 .1 4 6 )

3 .4 1 (0 .1 3 4 )

4 .1 4 (0 .1 6 3 )

3 .8 4 (0 .1 5 1 )

2. 70

BSC

•

HERMETIC METAL OR CERAMIC PACKAGES

HIGH RELIABILITY

MILITARY AND SPACE OPTIONS

SCREENING TO CECC LEVELS

FULLY ISOLATED (METAL VERSION)

3 .6 0 (0 .1 4 2 )

M a x .

1

3

0 .7 6

(0 .0 3 0 )

m in .

APPLICATIONS

1 6 .0 2 (0 .6 3 1 )

1 5 .7 3 (0 .6 1 9 )

1 0 .6 9 (0 .4 2 1 )

1 0 .3 9 (0 .4 0 9 )

2

• POWER LINEAR AND SWITCHING

APPLICATIONS

• GENERAL PURPOSE POWER

9 .6

9 .3

1 1 .5

1 1 .2

7 (0

8 (0

.3 8

.3 6

.4 5

.4 4

1 )

9 )

6 )

4 )

0 .5 0 (0 .0 2 0 )

0 .2 6 (0 .0 1 0 )

TO220M

SMD1

Pin 1

– Base

- TO220 Metal Package - Isolated

- Ceramic Surface Mount Package

Pin 2

– Collector

Pin 3

– Emitter

ABSOLUTE MAXIMUM RATINGS

(T

case

=25°C unless otherwise stated)

V

CBO

V

CEO

V

EBO

I

E

, I

C

I

B

P

tot

T

stg

T

j

Semelab plc.

Collector - Base voltage (I

E

= 0)

Collector - Emitter voltage (I

B

= 0)

Emitter - Base voltage (I

C

= 0)

Emitter , Collector current

Base current

Total power dissipation at T

case

£

75°C

Storage Temperature

Junction Temperature

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

BDS16

120V

BDS17

150V

5V

8A

2A

50W

–65 TO 200°C

200°C

Prelim. 7/00

BDS16SMD Related Products

	BDS16SMD	BDS17SMD	BDS16	BDS17
Description	8A, 120V, NPN, Si, POWER TRANSISTOR, TO-276AB, CERAMIC, SMD1, 3 PIN	8A, 150V, NPN, Si, POWER TRANSISTOR, TO-276AB, CERAMIC, SMD1, 3 PIN	8A, 120V, NPN, Si, POWER TRANSISTOR, HERMETIC SEALED, METAL, TO-220M, 3 PIN	8A, 150V, NPN, Si, POWER TRANSISTOR, HERMETIC SEALED, METAL, TO-220M, 3 PIN
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-276AB	TO-276AB	TO-220M	TO-220M
package instruction	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
Contacts	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	COLLECTOR	COLLECTOR	ISOLATED	ISOLATED
Maximum collector current (IC)	8 A	8 A	8 A	8 A
Collector-emitter maximum voltage	120 V	150 V	120 V	150 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	15	15	15
JESD-30 code	R-CBCC-N3	R-CBCC-N3	S-MSFM-P3	S-MSFM-P3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	METAL	METAL
Package shape	RECTANGULAR	RECTANGULAR	SQUARE	SQUARE
Package form	CHIP CARRIER	CHIP CARRIER	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	NO	NO
Terminal form	NO LEAD	NO LEAD	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz	30 MHz	30 MHz

Recommended Resources

Power amplifier composed of LM2876

Maintenance of automobile thyristor voltage regulator

Motor automatic switching starting circuit

High voltage follower circuit

820e computer motherboard circuit diagram_25

Computer motherboard circuit diagram 810 3_12

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components