BDS17 datasheet, PDF - EEWORLD Datasheet

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BDS17: Description8A, 150V, NPN, Si, POWER TRANSISTOR, HERMETIC SEALED, METAL, TO-220M, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size21KB，2 Pages; ManufacturerSEMELAB

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BDS17 Overview

8A, 150V, NPN, Si, POWER TRANSISTOR, HERMETIC SEALED, METAL, TO-220M, 3 PIN

BDS17 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SEMELAB
Parts packaging code	TO-220M
package instruction	FLANGE MOUNT, S-MSFM-P3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	150 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz

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BDS16 BDS16SMD

BDS17 BDS17SMD

MECHANICAL DATA

Dimensions in mm

1 0.6

0.8

4.6

16.5

3.6

Dia.

1 3 .5

1 0 .6

SILICON NPN

EPITAXIAL BASE

IN TO220 METAL AND

SMD1 CERAMIC SURFACE

MOUNT PACKAGES

FEATURES

1 23

1 3 .7 0

1.0

2 .5 4

BSC

0 .8 9

(0 .0 3 5 )

m in .

3 .7 0 (0 .1 4 6 )

3 .4 1 (0 .1 3 4 )

4 .1 4 (0 .1 6 3 )

3 .8 4 (0 .1 5 1 )

2. 70

BSC

•

HERMETIC METAL OR CERAMIC PACKAGES

HIGH RELIABILITY

MILITARY AND SPACE OPTIONS

SCREENING TO CECC LEVELS

FULLY ISOLATED (METAL VERSION)

3 .6 0 (0 .1 4 2 )

M a x .

1

3

0 .7 6

(0 .0 3 0 )

m in .

APPLICATIONS

1 6 .0 2 (0 .6 3 1 )

1 5 .7 3 (0 .6 1 9 )

1 0 .6 9 (0 .4 2 1 )

1 0 .3 9 (0 .4 0 9 )

2

• POWER LINEAR AND SWITCHING

APPLICATIONS

• GENERAL PURPOSE POWER

9 .6

9 .3

1 1 .5

1 1 .2

7 (0

8 (0

.3 8

.3 6

.4 5

.4 4

1 )

9 )

6 )

4 )

0 .5 0 (0 .0 2 0 )

0 .2 6 (0 .0 1 0 )

TO220M

SMD1

Pin 1

– Base

- TO220 Metal Package - Isolated

- Ceramic Surface Mount Package

Pin 2

– Collector

Pin 3

– Emitter

ABSOLUTE MAXIMUM RATINGS

(T

case

=25°C unless otherwise stated)

V

CBO

V

CEO

V

EBO

I

E

, I

C

I

B

P

tot

T

stg

T

j

Semelab plc.

Collector - Base voltage (I

E

= 0)

Collector - Emitter voltage (I

B

= 0)

Emitter - Base voltage (I

C

= 0)

Emitter , Collector current

Base current

Total power dissipation at T

case

£

75°C

Storage Temperature

Junction Temperature

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

BDS16

120V

BDS17

150V

5V

8A

2A

50W

–65 TO 200°C

200°C

Prelim. 7/00

BDS17 Related Products

	BDS17	BDS17SMD	BDS16SMD	BDS16
Description	8A, 150V, NPN, Si, POWER TRANSISTOR, HERMETIC SEALED, METAL, TO-220M, 3 PIN	8A, 150V, NPN, Si, POWER TRANSISTOR, TO-276AB, CERAMIC, SMD1, 3 PIN	8A, 120V, NPN, Si, POWER TRANSISTOR, TO-276AB, CERAMIC, SMD1, 3 PIN	8A, 120V, NPN, Si, POWER TRANSISTOR, HERMETIC SEALED, METAL, TO-220M, 3 PIN
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-220M	TO-276AB	TO-276AB	TO-220M
package instruction	FLANGE MOUNT, S-MSFM-P3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	FLANGE MOUNT, S-MSFM-P3
Contacts	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	ISOLATED	COLLECTOR	COLLECTOR	ISOLATED
Maximum collector current (IC)	8 A	8 A	8 A	8 A
Collector-emitter maximum voltage	150 V	150 V	120 V	120 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	15	15	15
JESD-30 code	S-MSFM-P3	R-CBCC-N3	R-CBCC-N3	S-MSFM-P3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	METAL
Package shape	SQUARE	RECTANGULAR	RECTANGULAR	SQUARE
Package form	FLANGE MOUNT	CHIP CARRIER	CHIP CARRIER	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	YES	NO
Terminal form	PIN/PEG	NO LEAD	NO LEAD	PIN/PEG
Terminal location	SINGLE	BOTTOM	BOTTOM	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz	30 MHz	30 MHz

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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