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BU508

Description
8A, 700V, NPN, Si, POWER TRANSISTOR, TO-218
CategoryDiscrete semiconductor    The transistor   
File Size62KB,1 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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BU508 Overview

8A, 700V, NPN, Si, POWER TRANSISTOR, TO-218

BU508 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codenot_compliant
Maximum collector current (IC)8 A
Collector-emitter maximum voltage700 V
ConfigurationSINGLE
Minimum DC current gain (hFE)2.3
JEDEC-95 codeTO-218
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment125 W
Maximum power dissipation(Abs)125 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)7 MHz
VCEsat-Max5 V
Base Number Matches1

BU508 Related Products

BU508 BU508FI BU208
Description 8A, 700V, NPN, Si, POWER TRANSISTOR, TO-218 8A, 700V, NPN, Si, POWER TRANSISTOR, TO-218 8A, 700V, NPN, Si, POWER TRANSISTOR, TO-3
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code not_compliant not_compliant not_compliant
Maximum collector current (IC) 8 A 8 A 8 A
Collector-emitter maximum voltage 700 V 700 V 700 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 2.3 2.3 2.2
JEDEC-95 code TO-218 TO-218 TO-3
JESD-30 code R-PSFM-T3 R-PSFM-T3 O-MBFM-P2
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 2
Maximum operating temperature 150 °C 150 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY METAL
Package shape RECTANGULAR RECTANGULAR ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
Maximum power consumption environment 125 W 60 W 150 W
Maximum power dissipation(Abs) 125 W 60 W 12.5 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE PIN/PEG
Terminal location SINGLE SINGLE BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 7 MHz 7 MHz 7 MHz
VCEsat-Max 5 V 5 V 5 V
package instruction FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, O-MBFM-P2
Maker - STMicroelectronics STMicroelectronics
Shell connection - ISOLATED COLLECTOR
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