Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD131
DESCRIPTION
·Complement
to type BD132
·With
TO-126 package
·High
current (Max: 3A)
·Low
voltage (Max: 45V)
APPLICATIONS
·For
general purpose power applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
·
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
T
mb
≤60℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
70
45
6
3
6
0.5
15
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-mb
PARAMETER
Thermal resistance from junction to ambient
Thermal resistance from junction to mounting base
VALUE
100
6
UNIT
K/W
K/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
PARAMETER
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
CONDITIONS
I
C
=0.5A; I
B
=50mA
I
C
=2A; I
B
=0.2A
I
C
=0.5A; I
B
=50mA
I
C
=2A; I
B
=0.2A
V
CB
=50V; I
E
=0
I
CBO
Collector cut-off current
V
CB
=50V; I
E
=0 T
j
=150℃
I
EBO
h
FE-1
h
FE-2
f
T
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
V
EB
=5V; I
C
=0
I
C
=0.5A ; V
CE
=12V
I
C
=2A ; V
CE
=1V
I
C
=0.25A; V
CE
=5V ;f=100MHz
40
20
60
MIN
TYP.
BD131
MAX
0.3
0.7
1.2
1.5
50
10
50
UNIT
V
V
V
V
nA
μA
nA
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BD131
Fig.2 Outline dimensions
3
京公网安备 11010802033920号
EEWORLD
