BYW25-800 datasheet, PDF - EEWORLD Datasheet

BYW25-800: DescriptionRectifier Diode, 1 Element, 40A, 800V V(RRM),; CategoryDiscrete semiconductor diode; File Size113KB，5 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BYW25-800 Overview

Rectifier Diode, 1 Element, 40A, 800V V(RRM),

Parameter Name	Attribute value
Reach Compliance Code	unknown
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	2.2 V
Maximum non-repetitive peak forward current	550 A
Number of components	1
Maximum operating temperature	150 °C
Maximum output current	40 A
Maximum repetitive peak reverse voltage	800 V
Maximum reverse recovery time	0.45 µs
surface mount	NO
Base Number Matches	1

	BYW25-800	BYW25-800R	BYW25-1000	BYW25-1000R
Description	Rectifier Diode, 1 Element, 40A, 800V V(RRM),	Rectifier Diode, 1 Element, 40A, 800V V(RRM),	Rectifier Diode, 1 Element, 40A, 1000V V(RRM),	Rectifier Diode, 1 Element, 40A, 1000V V(RRM),
Reach Compliance Code	unknown	unknown	unknown	unknown
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	2.2 V	1.5 V	1.5 V	1.5 V
Maximum non-repetitive peak forward current	550 A	550 A	550 A	550 A
Number of components	1	1	1	1
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Maximum output current	40 A	40 A	40 A	40 A
Maximum repetitive peak reverse voltage	800 V	800 V	1000 V	1000 V
Maximum reverse recovery time	0.45 µs	0.45 µs	0.45 µs	0.45 µs
surface mount	NO	NO	NO	NO
Maker	-	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)

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