BZW04P299RL datasheet, PDF - EEWORLD Datasheet

BZW04P299RL: Description400W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, F126, 2 PIN; CategoryDiscrete semiconductor diode; File Size192KB，7 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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BZW04P299RL Overview

400W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, F126, 2 PIN

Parameter Name	Attribute value
package instruction	O-PALF-W2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	UL RECOGNIZED
Maximum breakdown voltage	385 V
Minimum breakdown voltage	332 V
Breakdown voltage nominal value	350 V
Shell connection	ISOLATED
Maximum clamping voltage	618 V
Configuration	SINGLE
Minimum diode capacitance	80 pF
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak reverse power dissipation	400 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	1.7 W
Certification status	Not Qualified
Maximum reverse current	5 µA
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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