BBY58-07F datasheet, PDF - EEWORLD Datasheet

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BBY58-07F: DescriptionVariable Capacitance Diode, 18.3pF C(T), 10V, Silicon, Hyperabrupt, TSFP-4; CategoryDiscrete semiconductor diode; File Size72KB，3 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BBY58-07F Overview

Variable Capacitance Diode, 18.3pF C(T), 10V, Silicon, Hyperabrupt, TSFP-4

BBY58-07F Parametric

Parameter Name	Attribute value
package instruction	TSFP-4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH Q
Minimum breakdown voltage	10 V
Configuration	SEPARATE, 2 ELEMENTS
Diode Capacitance Tolerance	4.89%
Minimum diode capacitance ratio	2.8
Nominal diode capacitance	18.3 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JESD-30 code	R-PDSO-F4
Number of components	2
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Varactor Diode Classification	HYPERABRUPT
Base Number Matches	1

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BBY58-07F

Silicon Tuning Diode

Preliminary data

Excellent linearity

High Q hyperabrupt tuning diode

Low series inductance

Designed for low tuning voltage operation

for VCO's in mobile communications equipment

For low frequency control elements

such as TCXOs and VCXOs

Very low capacitance spread

Ultra small SMD package for dual diodes

1

2

EHA07008

3

4

XYs

2

1

TSFP-4

4

3

Type

BBY58-07F

Marking

B8s

Pin Configuration

1=C1 2=C2 3=A2 4=A1 -

-

Package

TSFP-4

Maximum Ratings

Parameter

Diode reverse voltage

Forward current

Operating temperature range

Storage temperature

Symbol

V

R

I

F

T

op

T

stg

Value

10

20

-55 ... 125

-55 ... 150

Unit

V

mA

°C

1

Feb-06-2002

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