CMLT2222ALEADFREE datasheet, PDF

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CMLT2222ALEADFREE: DescriptionSmall Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PICOMINI-6; CategoryDiscrete semiconductor The transistor; File Size485KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CMLT2222ALEADFREE Overview

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PICOMINI-6

CMLT2222ALEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-F6
Contacts	6
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	40 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-F6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN (315)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
Maximum off time (toff)	285 ns
Maximum opening time (tons)	35 ns
Base Number Matches	1

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CMLT2222A

CMLT2222AG*

SURFACE MOUNT

DUAL NPN SMALL SIGNAL

SILICON SWITCHING TRANSISTORS

Central

Semiconductor Corp.

DESCRIPTION:

These CENTRAL SEMICONDUCTOR devices consist of

two (2) isolated 2222A NPN silicon transistors,

manufactured by the epitaxial planar process and epoxy

molded in an SOT-563 surface mount package. These

PICOmini™ devices have been designed for small signal

general purpose and switching applications.

SOT-563 CASE

Device is

Halogen Free

by design

MARKING CODES: CMLT2222A:

CMLT2222AG*:

L22

2CG

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Power Dissipation (Note 1)

Power Dissipation (Note 2)

Power Dissipation (Note 3)

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

6.0

600

350

300

150

-65 to +150

357

UNITS

C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

ICBO

VCB=60V

ICBO

VCB=60V (TA=125 °C)

ICEV

VCE=60V, VEB=3.0V

IEBO

VEB=3.0V

BVCBO

IC=10μA

BVCEO

IC=10mA

BVEBO

IE=10μA

6.0

VCE(SAT)

IC=150mA, IB=15mA

0.3

VCE(SAT)

IC=500mA, IB=50mA

1.0

VBE(SAT)

IC=150mA, IB=15mA

0.6

1.2

VBE(SAT)

IC=500mA, IB=50mA

2.0

hFE

VCE=10V, IC=0.1mA

hFE

VCE=10V, IC=1.0mA

hFE

VCE=10V, IC=10mA

hFE

VCE=1.0V, IC=150mA

hFE

VCE=10V, IC=150mA

100

300

hFE

VCE=10V, IC=500mA

Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm

UNITS

μA

R2 (6-March 2009)

CMLT2222ALEADFREE Related Products

	CMLT2222ALEADFREE	CMLT2222AGTR	CMLT2222AGBK	CMLT2222ATR	CMLT2222ATRLEADFREE	CMLT2222ABK
Description	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PICOMINI-6	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC, PICOMINI-6	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC, PICOMINI-6	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC, PICOMINI-6	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PICOMINI-6	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC, PICOMINI-6
Is it Rohs certified?	conform to	incompatible	incompatible	incompatible	conform to	incompatible
package instruction	SMALL OUTLINE, R-PDSO-F6	PLASTIC, PICOMINI-6	PLASTIC, PICOMINI-6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code	compliant	unknown	unknown	not_compliant	compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A
Collector-emitter maximum voltage	40 V	40 V	40 V	40 V	40 V	40 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	40	40	40	40	40	40
JESD-30 code	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6
Number of components	2	2	2	2	2	2
Number of terminals	6	6	6	6	6	6
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	260	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	10	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	30	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz
Maximum off time (toff)	285 ns	285 ns	285 ns	285 ns	285 ns	285 ns
Maximum opening time (tons)	35 ns	35 ns	35 ns	35 ns	35 ns	35 ns
Contacts	6	6	6	6	-	6
JESD-609 code	e3	-	-	e0	e3	e0
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	-	150 °C
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
Terminal surface	MATTE TIN (315)	-	-	Tin/Lead (Sn/Pb)	Matte Tin (Sn) - with Nickel (Ni) barrier	Tin/Lead (Sn/Pb)
Maker	-	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
Maximum power dissipation(Abs)	-	0.35 W	0.35 W	0.35 W	-	0.35 W

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