CMLT2222A
CMLT2222AG*
SURFACE MOUNT
DUAL NPN SMALL SIGNAL
SILICON SWITCHING TRANSISTORS
Central
TM
Semiconductor Corp.
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices consist of
two (2) isolated 2222A NPN silicon transistors,
manufactured by the epitaxial planar process and epoxy
molded in an SOT-563 surface mount package. These
PICOmini™ devices have been designed for small signal
general purpose and switching applications.
SOT-563 CASE
*
Device is
Halogen Free
by design
MARKING CODES: CMLT2222A:
CMLT2222AG*:
L22
2CG
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
PD
TJ, Tstg
Θ
JA
75
40
6.0
600
350
300
150
-65 to +150
357
UNITS
V
V
V
mA
mW
mW
mW
O
C
O
C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=60V
10
ICBO
VCB=60V (TA=125 °C)
10
ICEV
VCE=60V, VEB=3.0V
10
IEBO
VEB=3.0V
10
BVCBO
IC=10μA
75
BVCEO
IC=10mA
40
BVEBO
IE=10μA
6.0
VCE(SAT)
IC=150mA, IB=15mA
0.3
VCE(SAT)
IC=500mA, IB=50mA
1.0
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
VBE(SAT)
IC=500mA, IB=50mA
2.0
hFE
VCE=10V, IC=0.1mA
35
hFE
VCE=10V, IC=1.0mA
50
hFE
VCE=10V, IC=10mA
75
hFE
VCE=1.0V, IC=150mA
50
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=500mA
40
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm
2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm
2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm
2
UNITS
nA
μA
nA
nA
V
V
V
V
V
V
V
R2 (6-March 2009)
Central
TM
Semiconductor Corp.
CMLT2222A
CMLT2222AG*
SURFACE MOUNT
DUAL NPN SMALL SIGNAL
SILICON SWITCHING TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
fT
VCE=20V, IC=20mA, f=100MHz
300
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
pF
Cib
VEB=0.5V, IC=0, f=1.0MHz
25
pF
hie
VCE=10V, IC=1.0mA, f=1.0kHz
2.0
8.0
kΩ
hie
VCE=10V, IC=10mA, f=1.0kHz
0.25
1.25
kΩ
hre
VCE=10V, IC=1.0mA, f=1.0kHz
8.0
x10
-4
hre
VCE=10V, IC=10mA, f=1.0kHz
4.0
x10
-4
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
300
hfe
VCE=10V, IC=10mA, f=1.0kHz
75
375
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
5.0
35
μS
hoe
VCE=10V, IC=10mA, f=1.0kHz
25
200
μS
rb'Cc
VCB=10V, IE=20mA, f=31.8MHz
150
ps
NF
VCE=10V, IC=100mA, RS=1.0kΩ, f=1.0kHz
4.0
dB
td
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
10
ns
tr
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
25
ns
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
225
ns
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
60
ns
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) COLLECTOR Q1
MARKING CODES: CMLT2222A:
L22
CMLT2222AG*: 2CG
*
Device is
Halogen Free
by design
R2 (6-March 2009)