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CMLT2222AGBK

Description
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC, PICOMINI-6
CategoryDiscrete semiconductor    The transistor   
File Size485KB,2 Pages
ManufacturerCentral Semiconductor
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CMLT2222AGBK Overview

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC, PICOMINI-6

CMLT2222AGBK Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionPLASTIC, PICOMINI-6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-F6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Maximum off time (toff)285 ns
Maximum opening time (tons)35 ns
CMLT2222A
CMLT2222AG*
SURFACE MOUNT
DUAL NPN SMALL SIGNAL
SILICON SWITCHING TRANSISTORS
Central
TM
Semiconductor Corp.
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices consist of
two (2) isolated 2222A NPN silicon transistors,
manufactured by the epitaxial planar process and epoxy
molded in an SOT-563 surface mount package. These
PICOmini™ devices have been designed for small signal
general purpose and switching applications.
SOT-563 CASE
*
Device is
Halogen Free
by design
MARKING CODES: CMLT2222A:
CMLT2222AG*:
L22
2CG
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
PD
TJ, Tstg
Θ
JA
75
40
6.0
600
350
300
150
-65 to +150
357
UNITS
V
V
V
mA
mW
mW
mW
O
C
O
C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=60V
10
ICBO
VCB=60V (TA=125 °C)
10
ICEV
VCE=60V, VEB=3.0V
10
IEBO
VEB=3.0V
10
BVCBO
IC=10μA
75
BVCEO
IC=10mA
40
BVEBO
IE=10μA
6.0
VCE(SAT)
IC=150mA, IB=15mA
0.3
VCE(SAT)
IC=500mA, IB=50mA
1.0
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
VBE(SAT)
IC=500mA, IB=50mA
2.0
hFE
VCE=10V, IC=0.1mA
35
hFE
VCE=10V, IC=1.0mA
50
hFE
VCE=10V, IC=10mA
75
hFE
VCE=1.0V, IC=150mA
50
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=500mA
40
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm
2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm
2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm
2
UNITS
nA
μA
nA
nA
V
V
V
V
V
V
V
R2 (6-March 2009)

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Description Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC, PICOMINI-6 Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PICOMINI-6 Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC, PICOMINI-6 Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC, PICOMINI-6 Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PICOMINI-6 Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC, PICOMINI-6
Is it Rohs certified? incompatible conform to incompatible incompatible conform to incompatible
package instruction PLASTIC, PICOMINI-6 SMALL OUTLINE, R-PDSO-F6 PLASTIC, PICOMINI-6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code unknown compliant unknown not_compliant compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A
Collector-emitter maximum voltage 40 V 40 V 40 V 40 V 40 V 40 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 40 40 40 40 40 40
JESD-30 code R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6
Number of components 2 2 2 2 2 2
Number of terminals 6 6 6 6 6 6
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 NOT SPECIFIED NOT SPECIFIED 260 NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN NPN
surface mount YES YES YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED 10 NOT SPECIFIED NOT SPECIFIED 30 NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 300 MHz 300 MHz 300 MHz 300 MHz 300 MHz 300 MHz
Maximum off time (toff) 285 ns 285 ns 285 ns 285 ns 285 ns 285 ns
Maximum opening time (tons) 35 ns 35 ns 35 ns 35 ns 35 ns 35 ns
Maker Central Semiconductor - Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor
Contacts 6 6 6 6 - 6
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C - 150 °C
Maximum power dissipation(Abs) 0.35 W - 0.35 W 0.35 W - 0.35 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified
JESD-609 code - e3 - e0 e3 e0
Terminal surface - MATTE TIN (315) - Tin/Lead (Sn/Pb) Matte Tin (Sn) - with Nickel (Ni) barrier Tin/Lead (Sn/Pb)
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