CMOS64-01M datasheet, PDF - EEWORLD Datasheet

CMOS64-01M: DescriptionSRAM Module, 8KX8, 150ns, CMOS, CDIP28; Categorystorage storage; File Size124KB，2 Pages; ManufacturerIntegrated Circuits Inc

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CMOS64-01M Overview

SRAM Module, 8KX8, 150ns, CMOS, CDIP28

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	DIP, DIP28,.6
Reach Compliance Code	unknown
Maximum access time	150 ns
JESD-30 code	R-XDIP-T28
JESD-609 code	e0
memory density	65536 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	8KX8
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Filter level	MIL-STD-883 Class B (Modified)
Maximum standby current	0.00002 A
Maximum slew rate	0.17 mA
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Base Number Matches	1

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	CMOS64-01M	CMOS64-01	CMOS64-01A
Description	SRAM Module, 8KX8, 150ns, CMOS, CDIP28	SRAM Module, 8KX8, 250ns, CMOS, CDIP28	SRAM Module, 8KX8, 150ns, CMOS, CDIP28
Is it Rohs certified?	incompatible	incompatible	incompatible
package instruction	DIP, DIP28,.6	DIP, DIP28,.6	DIP, DIP28,.6
Reach Compliance Code	unknown	unknown	unknown
Maximum access time	150 ns	250 ns	150 ns
JESD-30 code	R-XDIP-T28	R-XDIP-T28	R-XDIP-T28
JESD-609 code	e0	e0	e0
memory density	65536 bit	65536 bit	65536 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	8	8	8
Number of terminals	28	28	28
word count	8192 words	8192 words	8192 words
character code	8000	8000	8000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C
organize	8KX8	8KX8	8KX8
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC	CERAMIC	CERAMIC
encapsulated code	DIP	DIP	DIP
Encapsulate equivalent code	DIP28,.6	DIP28,.6	DIP28,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.00002 A	0.000005 A	0.00002 A
Maximum slew rate	0.17 mA	0.1 mA	0.17 mA
surface mount	NO	NO	NO
technology	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL
Base Number Matches	1	1	1

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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