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MB4S

Description
0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size39KB,1 Pages
ManufacturerDAYA
Websitehttp://www.cndaya.com/
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MB4S Overview

0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

MB4S Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Maximum average input current0.8000 A
Processing package descriptionPlastic, MB-S, 4 PIN
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage400 V
Maximum non-repetitive peak forward current30 A
MB2S
SINGLE PHASE 0.5 AMPS.
GLASS PASSIVATED BRIDGE
RECTIFIERS
Voltage Range
200 to 1000 Volts
Current
0.5 Amperes
MBS
Features
*
Ideal for printed circuit board
.193(4.90)
.177(4.50)
.033(0.84)
.022(0.56)
.157(4.00)
.142(3.60)
~
+
~
-
.276(7.0)
MAX
Lead:
Reliable low cost construction utilizing
molded plastic technique
*
High surge current capability
*
High temperature soldering guaranteed:
260
O
C / 10 seconds at 5 lbs.,(2.3kg)
tension
*
Small size,simple installation
*
Leads solderable per MIL-STD-202
Method 208
.102(2.60)
.087(2.20)
.106(2.70)
.090(2.30)
.053(1.53)
.037(0.95)
.014(0.35)
.006(0.15)
.008(0.20) .118(3.0)
MAX
MAX
.083(2.12)
.043(1.10)
.043(1.10)
.028(0.70)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MB2S
MB4S
mb4s
400
280
400
MB6S
mb6s
600
420
600
0.5
0.8
I
FSM
V
F
I
R
C
J
R
*JA
T
J
T
STG
35
1.0
5.0
100
15
75
-55 to +150
-55 to +150
o
o
MB8S
mb8s
800
560
800
MB10S
mb10s
1000
700
1000
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximunm Average Forward Rectified Current
at T
A
= 30
o
C On glass-epoxy P.C.B.
On aluminum substrate
Peak Forward Surge Current, 8.3 ms Single
Half Sinewave Superimposed on Rated Load
(JEDEC method)
Maximum Instantaneous Forward Voltage
Drop Per Leg@0.4A
Maximun DC Reverse Current T
A
= 25 C
o
at Rated DC Blocking Voltage T
A
= 100 C
Typical Junction Capacitance Per Leg (Note3)
Typical Thermal Resistance Per Leg
Operating Temperature Range
Storage Temperature Range
o
UNITS
V
V
V
A
mb2s
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
A
V
uA
uA
pF
C/W
o
o
C
C
Note:1.On glass epoxy P.C.B mounted on 0.05x 0.05"(1.3x1.3mm)pads
2.On aluminum substrate P.C.B with on area of 0.8"x 0.8"(20x20mm) mounted on
0.05x 0.05"(1.3x1.3mm)solder pad
3.Measured at 1.0MHz and applied reverse valtage of 4.0 volts.

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