MB85R2001PFTN-GE1 datasheet, PDF

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MB85R2001PFTN-GE1: DescriptionMemory FRAM CMOS 2 M Bit (256 K 】 8); Categorystorage storage; File Size116KB，16 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html; Environmental Compliance

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MB85R2001PFTN-GE1 Overview

Memory FRAM CMOS 2 M Bit (256 K 】 8)

MB85R2001PFTN-GE1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	TSOP1, TSSOP48,.55,20
Reach Compliance Code	compli
Maximum access time	100 ns
JESD-30 code	R-PDSO-G48
length	12.4 mm
memory density	2097152 bi
Memory IC Type	MEMORY CIRCUIT
memory width	8
Number of functions	1
Number of terminals	48
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP48,.55,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.00005 A
Maximum slew rate	0.015 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	12 mm
Base Number Matches	1

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FUJITSU MICROELECTRONICS

DATA SHEET

DS05-13107-4E

Memory FRAM

CMOS

2 M Bit (256 K

MB85R2001

■

DESCRIPTIONS

The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words

8 bits

of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

The MB85R2001 is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85R2001 can be used for 10

read/write operations, which is a significant

improvement over the number of read and write operations supported by Flash memory and E

PROM.

The MB85R2001 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.

■

FEATURES

•

Bit configuration

Read/write endurance

Operating power supply voltage

Operating temperature range

Data retention

Package

: 262,144 words

8 bits

: 10

times/bit

: 3.0 V to 3.6 V

−

40 °C to

85 °C

: 10 years (

°C)

: 48-pin plastic TSOP (1)

2009.8

MB85R2001PFTN-GE1 Related Products

	MB85R2001PFTN-GE1	MB85R2001	MB85R2001_09
Description	Memory FRAM CMOS 2 M Bit (256 K 】 8)	Memory FRAM CMOS 2 M Bit (256 K 】 8)	Memory FRAM CMOS 2 M Bit (256 K 】 8)

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