D965 datasheet, PDF - EEWORLD Datasheet

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D965: DescriptionSmall Signal Bipolar Transistor, 5A I(C), 22V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size79KB，2 Pages; ManufacturerMicro Commercial Components (MCC)

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D965 Overview

Small Signal Bipolar Transistor, 5A I(C), 22V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3

D965 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	22 V
Configuration	SINGLE
Minimum DC current gain (hFE)	150
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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MCC

Micro Commercial Components

TM

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

D965

•

Features

Power Dissipation: P

CM

=0.75W @ T

amb

=25

Collector Current: I

CM

=5A

Case Material: Molded Plastic.

Classification Rating 94V-0

UL Flammability

NPN

Plastic-Encapsulate

Transistors

TO-92

Marking: D965R/T

Maximum Ratings

Symbol

V

CEO

V

CBO

V

EBO

I

C

P

D

T

J

T

STG

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current, Continuous

Total Device Dissipation

Operating Junction Temperature

Storage Temperature

Rating

22

42

6.0

5

750

-55 to +150

Unit

V

A

mW

A

E

B

Electrical Characteristics @ 25

O

C Unless Otherwise Specified

Symbol

Parameter

Collector-Emitter Breakdown Voltage*

(I

C

=10mAdc, I

B

=0)

Collector-Base Breakdown Voltage

(I

C

=100µAdc, I

E

=0)

Emitter-Base Breakdown Voltage

(I

E

=100µAdc, I

C

=0)

Collector Cutoff Current

(V

CB

=20Vdc, I

E

=0)

Base Cutoff Current

(V

EB

=3.0Vdc, I

C

=0)

DC Current Gain ( V

CE

=2V, I

C

=0.15mA)

( V

CE

=2V, I

C

=500mA)

( V

CE

=2V, I

C

=2000mA)

Collector-emitter Saturation Voltage

(I

C

=3000mA, I

B

=100mA)

Min

Max

Units

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

EBO

H

FE

22

42

6.0

---

150

340

150

---

100

---

950

---

0.35

V

Vdc

nAdc

C

1

2

3

D

V

CE(sat)

1.EMITTER

2.COLLECTOR

3.BASE

G

Classification of H

FE

@ ( V

CE

=2V, I

C

=500mA)

Rank

Range

R

340-600

T

560-950

DIM

A

B

C

D

E

G

DIMENSIONS

INCHES

MIN

.170

.550

.010

.130

.010

MM

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

.190

.590

.020

.160

.104

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

www.mccsemi.com

Revision: 3

1 of 2

2006/05/26

D965 Related Products

	D965	D965-BP
Description	Small Signal Bipolar Transistor, 5A I(C), 22V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 5A I(C), 22V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3
Is it Rohs certified?	incompatible	conform to
Parts packaging code	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	5 A	5 A
Collector-emitter maximum voltage	22 V	22 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	150	150
JEDEC-95 code	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e0	e3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	TIN LEAD	MATTE TIN
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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