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MBR1045CT

Description
10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size224KB,2 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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MBR1045CT Overview

10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB

MBR1045CT Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionPLASTIC PACKAGE-3
stateDISCONTINUED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structureCOMMON CATHODE, 2 ELEMENTS
Shell connectionCATHODE
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum repetitive peak reverse voltage45 V
Maximum average forward current10 A
Maximum non-repetitive peak forward current125 A
Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
Features
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
MBR1030CT
THRU
MBR1060CT
10 Amp
Schottky Barrier
Rectifier
30-60 Volts
TO-220AB
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +175°C
Device
Marking
:
Maximum
Recurrent
Peak
Reverse
Voltage
30V
35V
40V
45V
50V
60V
Maximum
RMS
Voltage
21V
24.5V
28V
31.5V
35V
42V
Maximum
DC
Blocking
Voltage
30V
35V
40V
45V
50V
60V
Catalog
Number
MBR1030CT
MBR1035CT
MBR1040CT
MBR1045CT
MBR1050CT
MBR1060CT
B
C
K
PIN
L
M
D
A
E
MBR1030CT
MBR1035CT
MBR1040CT
MBR1045CT
MBR1050CT
MBR1060CT
F
G
I
J
N
H H
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
MBR1030CT-45CT
MBR1050CT-60CT
MBR1030CT-45CT
MBR1050CT-60CT
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
MBR1030CT-45CT
MBR1050CT-60CT
I
F(AV)
I
FSM
10A
125A
T
C
= 105°C
PIN 1
8.3ms, half sine
PIN 3
PIN 2
CASE


MM

14.22
9.65
2.54
5.84
9.65
------
12.70
2.29
0.51
0.30
3.53
3.56
1.14
2.03


15.88
10.67
3.43
6.86
10.67
6.35
14.73
2.79
1.14
0.64
4.09
4.83
1.40
2.92
 
V
F
.70V
.80V
.57V
.65V
0.1mA
15mA
I
FM
= 5A
T
J
= 25°C
I
FM
= 5A
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
IR

A
B
C
D
E
F
G
H
I
J
K
L
M
N
INCHES



.560
.625
.380
.420
.100
.135
.230
.270
.380
.420
------
.250
.500
.580
.090
.110
.020
.045
.012
.025
.139
.161
.140
.190
.045
.055
.080
.115
C
J
170pF
220pF
Measured at
1.0MHz, V
R
=4.0V
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
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MBR1045CT Related Products

MBR1045CT MBR1040CT MBR1050CT MBR1060CT
Description 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB RECTIFIER DIODES,COMMON CATHODE,SCHOTTKY,60V V(RRM),TO-220AB

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Index Files: 1004  1169  1010  815  1051  21  24  17  22  51 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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