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CY7C1353C-100AXI

Description
ZBT SRAM, 256KX18, 6.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100
Categorystorage    storage   
File Size302KB,13 Pages
ManufacturerCypress Semiconductor
Environmental Compliance  
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CY7C1353C-100AXI Overview

ZBT SRAM, 256KX18, 6.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100

CY7C1353C-100AXI Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeQFP
package instructionLQFP,
Contacts100
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time6.5 ns
Other featuresFLOW-THROUGH ARCHITECTURE
JESD-30 codeR-PQFP-G100
JESD-609 codee4
length20 mm
memory density4718592 bit
Memory IC TypeZBT SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals100
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX18
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceNICKEL PALLADIUM GOLD
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperature20
width14 mm
Base Number Matches1
CY7C1353G
4-Mbit (256K x 18) Flow-through SRAM
with NoBL™ Architecture
Features
• Can support up to 133-MHz bus operations with zero
wait states
— Data is transferred on every clock
• Pin compatible and functionally equivalent to ZBT™
devices
• Internally self-timed output buffer control to eliminate
the need to use OE
• Registered inputs for flow-through operation
• Byte Write capability
• 256K x 18 common I/O architecture
• 2.5V/3.3V I/O power supply (V
DDQ
)
• Fast clock-to-output times
— 6.5 ns (for 133-MHz device)
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• Asynchronous Output Enable
• Available in lead-free 100-Pin TQFP package
• Burst Capability—linear or interleaved burst order
• Low standby power
Functional Description
[1]
The CY7C1353G is a 3.3V, 256K x 18 Synchronous
Flow-through Burst SRAM designed specifically to support
unlimited true back-to-back Read/Write operations without the
insertion of wait states. The CY7C1353G is equipped with the
advanced No Bus Latency™ (NoBL™) logic required to
enable consecutive Read/Write operations with data being
transferred on every clock cycle. This feature dramatically
improves the throughput of data through the SRAM, especially
in systems that require frequent Write-Read transitions.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. The clock input is qualified by
the Clock Enable (CEN) signal, which when deasserted
suspends operation and extends the previous clock cycle.
Maximum access delay from the clock rise is 6.5 ns (133-MHz
device).
Write operations are controlled by the two Byte Write Select
(BW
[A:B]
) and a Write Enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated
during the data portion of a write sequence.
Logic Block Diagram
A0, A1, A
MODE
CLK
CEN
C
CE
ADV/LD
C
WRITE ADDRESS
REGISTER
ADDRESS
REGISTER
A1
D1
A0
D0
Q1 A1'
A0'
Q0
BURST
LOGIC
ADV/LD
BW
A
BW
B
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
D
A
T
A
S
T
E
E
R
I
N
G
O
U
T
P
U
T
B
U
F
F
E
R
S
E
DQs
DQP
A
DQP
B
WE
OE
CE
1
CE
2
CE
3
ZZ
INPUT
E
REGISTER
READ LOGIC
SLEEP
CONTROL
Note:
1.For best-practices recommendations, please refer to the Cypress application note
System Design Guidelines
on www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05515 Rev. *D
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised July 4, 2006

CY7C1353C-100AXI Related Products

CY7C1353C-100AXI CY7C1353C-133AXI CY7C1353C-100AXC CY7C1353C-133AXC
Description ZBT SRAM, 256KX18, 6.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100 ZBT SRAM, 256KX18, 8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100 ZBT SRAM, 256KX18, 6.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100 ZBT SRAM, 256KX18, 8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100
Is it lead-free? Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to
Parts packaging code QFP QFP QFP QFP
package instruction LQFP, LQFP, LQFP, LQFP,
Contacts 100 100 100 100
Reach Compliance Code compliant compliant compliant compliant
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 6.5 ns 8 ns 6.5 ns 8 ns
Other features FLOW-THROUGH ARCHITECTURE FLOW-THROUGH ARCHITECTURE FLOW-THROUGH ARCHITECTURE FLOW-THROUGH ARCHITECTURE
JESD-30 code R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100
JESD-609 code e4 e4 e4 e4
length 20 mm 20 mm 20 mm 20 mm
memory density 4718592 bit 4718592 bit 4718592 bit 4718592 bit
Memory IC Type ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM
memory width 18 18 18 18
Humidity sensitivity level 3 3 3 3
Number of functions 1 1 1 1
Number of terminals 100 100 100 100
word count 262144 words 262144 words 262144 words 262144 words
character code 256000 256000 256000 256000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 70 °C 70 °C
organize 256KX18 256KX18 256KX18 256KX18
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LQFP LQFP LQFP LQFP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 260 260 260 260
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.6 mm 1.6 mm 1.6 mm 1.6 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3.135 V 3.135 V 3.135 V 3.135 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES
technology CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL
Terminal surface NICKEL PALLADIUM GOLD NICKEL PALLADIUM GOLD NICKEL PALLADIUM GOLD NICKEL PALLADIUM GOLD
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal pitch 0.65 mm 0.65 mm 0.65 mm 0.65 mm
Terminal location QUAD QUAD QUAD QUAD
Maximum time at peak reflow temperature 20 20 20 20
width 14 mm 14 mm 14 mm 14 mm
Base Number Matches 1 1 1 -
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