MC-4516CB647PF-A75 datasheet, PDF

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MC-4516CB647PF-A75: Description16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE; Categorystorage storage; File Size155KB，16 Pages; ManufacturerELPIDA; Websitehttp://www.elpida.com/en

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MC-4516CB647PF-A75 Overview

16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

MC-4516CB647PF-A75 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ELPIDA
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	5.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	1073741824 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	168
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Maximum standby current	0.008 A
Maximum slew rate	1.92 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL

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DATA SHEET

MOS INTEGRATED CIRCUIT

MC-4516CB647

16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE

UNBUFFERED TYPE

Description

Features

Part number

MC-4516CB647EF-A75

MC-4516CB647PF-A75

MC-4516CB647XF-A75

The MC-4516CB647EF, MC-4516CB647PF and MC-4516CB647XF are 16,777,216 words by 64 bits synchronous

dynamic RAM module on which 8 pieces of 128M SDRAM:

PD45128841 are assembled.

This module provides high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

•

16,777,216 words by 64 bits organization

•

Clock frequency and access time from CLK

•

Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

•

Pulsed interface

•

Possible to assert random column address in every cycle

•

Quad internal banks controlled by BA0 and BA1 (Bank Select)

•

Programmable burst-length (1, 2, 4, 8 and full page)

•

Programmable wrap sequence (sequential / interleave)

•

Programmable /CAS latency (2, 3)

•

Automatic precharge and controlled precharge

•

CBR (Auto) refresh and self refresh

•

All DQs have 10

Ω ±10

% of series resistor

•

Single 3.3 V

0.3 V power supply

•

LVTTL compatible

•

4,096 refresh cycles/64 ms

•

Burst termination by Burst Stop command and Precharge command

•

168-pin dual in-line memory module (Pin pitch = 1.27 mm)

•

Unbuffered type

•

Serial PD

Document No. E0058N20 (Ver. 2.0)

Date Published March 2001 CP (K)

Printed in Japan

/CAS latency

Clock frequency

(MAX.)

133 MHz

100 MHz

133 MHz

Access time from CLK

(MAX.)

5.4 ns

6.0 ns

5.4 ns

6.0 ns

5.4 ns

6.0 ns

CL = 3

CL = 2

CL = 3

CL = 2

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for

availability and additional information.

100 MHz

CL = 3

CL = 2

133 MHz

100 MHz

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

MC-4516CB647PF-A75 Related Products

	MC-4516CB647PF-A75	MC-4516CB647XF-A75	MC-4516CB647
Description	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
Is it Rohs certified?	incompatible	incompatible	-
Maker	ELPIDA	ELPIDA	-
Parts packaging code	DIMM	DIMM	-
package instruction	DIMM, DIMM168	DIMM, DIMM168	-
Contacts	168	168	-
Reach Compliance Code	unknow	unknow	-
ECCN code	EAR99	EAR99	-
access mode	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	-
Maximum access time	5.4 ns	5.4 ns	-
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-
Maximum clock frequency (fCLK)	133 MHz	133 MHz	-
I/O type	COMMON	COMMON	-
JESD-30 code	R-XDMA-N168	R-XDMA-N168	-
memory density	1073741824 bi	1073741824 bi	-
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	-
memory width	64	64	-
Number of functions	1	1	-
Number of ports	1	1	-
Number of terminals	168	168	-
word count	16777216 words	16777216 words	-
character code	16000000	16000000	-
Operating mode	SYNCHRONOUS	SYNCHRONOUS	-
Maximum operating temperature	70 °C	70 °C	-
organize	16MX64	16MX64	-
Output characteristics	3-STATE	3-STATE	-
Package body material	UNSPECIFIED	UNSPECIFIED	-
encapsulated code	DIMM	DIMM	-
Encapsulate equivalent code	DIMM168	DIMM168	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	-
power supply	3.3 V	3.3 V	-
Certification status	Not Qualified	Not Qualified	-
refresh cycle	4096	4096	-
self refresh	YES	YES	-
Maximum standby current	0.008 A	0.008 A	-
Maximum slew rate	1.92 mA	1.92 mA	-
Maximum supply voltage (Vsup)	3.6 V	3.6 V	-
Minimum supply voltage (Vsup)	3 V	3 V	-
Nominal supply voltage (Vsup)	3.3 V	3.3 V	-
surface mount	NO	NO	-
technology	CMOS	CMOS	-
Temperature level	COMMERCIAL	COMMERCIAL	-
Terminal form	NO LEAD	NO LEAD	-
Terminal pitch	1.27 mm	1.27 mm	-
Terminal location	DUAL	DUAL	-

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