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MC-4516CB647XF-A75

Description
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
Categorystorage    storage   
File Size155KB,16 Pages
ManufacturerELPIDA
Websitehttp://www.elpida.com/en
Download Datasheet Parametric Compare View All

MC-4516CB647XF-A75 Overview

16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

MC-4516CB647XF-A75 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerELPIDA
Parts packaging codeDIMM
package instructionDIMM, DIMM168
Contacts168
Reach Compliance Codeunknow
ECCN codeEAR99
access modeSINGLE BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N168
memory density1073741824 bi
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals168
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM168
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
self refreshYES
Maximum standby current0.008 A
Maximum slew rate1.92 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516CB647
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
EO
Description
Features
Part number
MC-4516CB647EF-A75
MC-4516CB647PF-A75
MC-4516CB647XF-A75
The MC-4516CB647EF, MC-4516CB647PF and MC-4516CB647XF are 16,777,216 words by 64 bits synchronous
dynamic RAM module on which 8 pieces of 128M SDRAM:
µ
PD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
16,777,216 words by 64 bits organization
Clock frequency and access time from CLK
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and full page)
Programmable wrap sequence (sequential / interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
All DQs have 10
Ω ±10
% of series resistor
Single 3.3 V
±
0.3 V power supply
LVTTL compatible
4,096 refresh cycles/64 ms
Burst termination by Burst Stop command and Precharge command
168-pin dual in-line memory module (Pin pitch = 1.27 mm)
Unbuffered type
Serial PD
Document No. E0058N20 (Ver. 2.0)
Date Published March 2001 CP (K)
Printed in Japan
L
/CAS latency
Clock frequency
(MAX.)
133 MHz
100 MHz
133 MHz
Access time from CLK
(MAX.)
5.4 ns
6.0 ns
5.4 ns
6.0 ns
5.4 ns
6.0 ns
CL = 3
CL = 2
CL = 3
CL = 2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
o
Pr
100 MHz
CL = 3
CL = 2
133 MHz
100 MHz
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
du
ct

MC-4516CB647XF-A75 Related Products

MC-4516CB647XF-A75 MC-4516CB647 MC-4516CB647PF-A75
Description 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
Is it Rohs certified? incompatible - incompatible
Maker ELPIDA - ELPIDA
Parts packaging code DIMM - DIMM
package instruction DIMM, DIMM168 - DIMM, DIMM168
Contacts 168 - 168
Reach Compliance Code unknow - unknow
ECCN code EAR99 - EAR99
access mode SINGLE BANK PAGE BURST - SINGLE BANK PAGE BURST
Maximum access time 5.4 ns - 5.4 ns
Other features AUTO/SELF REFRESH - AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 133 MHz - 133 MHz
I/O type COMMON - COMMON
JESD-30 code R-XDMA-N168 - R-XDMA-N168
memory density 1073741824 bi - 1073741824 bi
Memory IC Type SYNCHRONOUS DRAM MODULE - SYNCHRONOUS DRAM MODULE
memory width 64 - 64
Number of functions 1 - 1
Number of ports 1 - 1
Number of terminals 168 - 168
word count 16777216 words - 16777216 words
character code 16000000 - 16000000
Operating mode SYNCHRONOUS - SYNCHRONOUS
Maximum operating temperature 70 °C - 70 °C
organize 16MX64 - 16MX64
Output characteristics 3-STATE - 3-STATE
Package body material UNSPECIFIED - UNSPECIFIED
encapsulated code DIMM - DIMM
Encapsulate equivalent code DIMM168 - DIMM168
Package shape RECTANGULAR - RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY - MICROELECTRONIC ASSEMBLY
power supply 3.3 V - 3.3 V
Certification status Not Qualified - Not Qualified
refresh cycle 4096 - 4096
self refresh YES - YES
Maximum standby current 0.008 A - 0.008 A
Maximum slew rate 1.92 mA - 1.92 mA
Maximum supply voltage (Vsup) 3.6 V - 3.6 V
Minimum supply voltage (Vsup) 3 V - 3 V
Nominal supply voltage (Vsup) 3.3 V - 3.3 V
surface mount NO - NO
technology CMOS - CMOS
Temperature level COMMERCIAL - COMMERCIAL
Terminal form NO LEAD - NO LEAD
Terminal pitch 1.27 mm - 1.27 mm
Terminal location DUAL - DUAL
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