DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516CB647
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
EO
Description
Features
Part number
MC-4516CB647EF-A75
MC-4516CB647PF-A75
MC-4516CB647XF-A75
The MC-4516CB647EF, MC-4516CB647PF and MC-4516CB647XF are 16,777,216 words by 64 bits synchronous
dynamic RAM module on which 8 pieces of 128M SDRAM:
µ
PD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
•
16,777,216 words by 64 bits organization
•
Clock frequency and access time from CLK
•
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
•
Pulsed interface
•
Possible to assert random column address in every cycle
•
Quad internal banks controlled by BA0 and BA1 (Bank Select)
•
Programmable burst-length (1, 2, 4, 8 and full page)
•
Programmable wrap sequence (sequential / interleave)
•
Programmable /CAS latency (2, 3)
•
Automatic precharge and controlled precharge
•
CBR (Auto) refresh and self refresh
•
All DQs have 10
Ω ±10
% of series resistor
•
Single 3.3 V
±
0.3 V power supply
•
LVTTL compatible
•
4,096 refresh cycles/64 ms
•
Burst termination by Burst Stop command and Precharge command
•
168-pin dual in-line memory module (Pin pitch = 1.27 mm)
•
Unbuffered type
•
Serial PD
Document No. E0058N20 (Ver. 2.0)
Date Published March 2001 CP (K)
Printed in Japan
L
/CAS latency
Clock frequency
(MAX.)
133 MHz
100 MHz
133 MHz
Access time from CLK
(MAX.)
5.4 ns
6.0 ns
5.4 ns
6.0 ns
5.4 ns
6.0 ns
CL = 3
CL = 2
CL = 3
CL = 2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
o
Pr
100 MHz
CL = 3
CL = 2
133 MHz
100 MHz
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
du
ct
MC-4516CB647
Pin Configuration
168-pin Dual In-line Memory Module Socket Type (Edge connector: Gold plated)
85
86
87
88
89
90
91
92
93
94
V
SS
DQ32
DQ33
DQ34
DQ35
Vcc
DQ36
DQ37
DQ38
DQ39
DQ40
V
SS
DQ41
DQ42
DQ43
DQ44
DQ45
Vcc
DQ46
DQ47
NC
NC
V
SS
NC
NC
Vcc
/CAS
DQMB4
DQMB5
NC
/RAS
V
SS
A1
A3
A5
A7
A9
BA0 (A13)
A11
Vcc
CLK1
NC
V
SS
CKE0
NC
DQMB6
DQMB7
NC
Vcc
NC
NC
NC
NC
V
SS
DQ48
DQ49
DQ50
DQ51
Vcc
DQ52
NC
NC
NC
V
SS
DQ53
DQ54
DQ55
V
SS
DQ56
DQ57
DQ58
DQ59
Vcc
DQ60
DQ61
DQ62
DQ63
V
SS
CLK3
NC
SA0
SA1
SA2
Vcc
V
SS
DQ0
DQ1
DQ2
DQ3
Vcc
DQ4
DQ5
DQ6
DQ7
DQ8
V
SS
DQ9
DQ10
DQ11
DQ12
DQ13
Vcc
DQ14
DQ15
NC
NC
V
SS
NC
NC
Vcc
/WE
DQMB0
DQMB1
/CS0
NC
V
SS
A0
A2
A4
A6
A8
A10
BA1 (A12)
Vcc
Vcc
CLK0
V
SS
NC
/CS2
DQMB2
DQMB3
NC
Vcc
NC
NC
NC
NC
V
SS
DQ16
DQ17
DQ18
DQ19
Vcc
DQ20
NC
NC
NC
V
SS
DQ21
DQ22
DQ23
V
SS
DQ24
DQ25
DQ26
DQ27
Vcc
DQ28
DQ29
DQ30
DQ31
V
SS
CLK2
NC
WP
SDA
SCL
Vcc
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
/xxx indicates active low signal.
EO
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
L
o
Pr
CKE0
/RAS
/CAS
/WE
SDA
SCL
V
CC
V
SS
WP
NC
Data Sheet E0058N20
A0 - A11
: Address Inputs
[Row: A0 - A11, Column: A0 - A9]
BA0 (A13), BA1 (A12) : SDRAM Bank Select
: Data Inputs/Outputs
: Clock Input
: Clock Enable Input
: Chip Select Input
: Row Address Strobe
: Column Address Strobe
DQ0 - DQ63
CLK0 - CLK3
/CS0, /CS2
du
DQMB0 - DQMB7
SA0 - SA2
: Ground
: Write Enable
: DQ Mask Enable
: Address Input for EEPROM
: Serial Data I/O for PD
: Clock Input for PD
ct
: Power Supply
: Write Protect
: No Connection
3
MC-4516CB647
Electrical Specifications
•
All voltages are referenced to V
SS
(GND).
•
After power up, wait more than 100
µ
s and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Voltage on power supply pin relative to GND
Voltage on input pin relative to GND
Short circuit output current
Power dissipation
Symbol
V
CC
V
T
I
O
P
D
T
A
T
stg
Condition
Rating
–0.5 to +4.6
–0.5 to +4.6
50
8
0 to 70
–55 to +125
Unit
V
V
mA
W
°C
°C
EO
Storage temperature
Operating ambient temperature
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply voltage
High level input voltage
Low level input voltage
Operating ambient temperature
Symbol
V
CC
V
IH
V
IL
T
A
Condition
MIN.
3.0
2.0
−0.3
0
TYP.
3.3
MAX.
3.6
V
CC
+ 0.3
+0.8
70
Unit
V
V
V
°C
Capacitance (T
A
= 25
°
C, f = 1 MHz)
Parameter
Input capacitance
Data input/output capacitance
L
Symbol
C
I1
C
I2
C
I3
C
I4
C
I5
C
I/O
o
Pr
Test condition
A0 - A11, BA0(A13), BA1(A12), /RAS,
/CAS, /WE
CLK0, CLK2
CKE0
/CS0, /CS2
DQMB0 - DQMB7
DQ0 - DQ63
Data Sheet E0058N20
MIN.
24
20
TYP.
MAX.
62
40
Unit
pF
du
28
52
15
3
29
13
4
13
pF
ct
5