CMLM0584
Multi Discrete Module
™
w w w. c e n t r a l s e m i . c o m
SURFACE MOUNT SILICON
P-CHANNEL MOSFET AND
LOW VF SCHOTTKY DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM0584
is a Multi Discrete Module™ consisting of a single
P-Channel Enhancement-mode MOSFET and a
Low VF Schottky diode packaged in a space saving
PICOmini™ SOT-563 surface mount case. This
device is designed for small signal general purpose
applications where size and operational efficiency are
prime requirements.
MARKING CODE: 58C
SOT-563 CASE
• Device is
Halogen Free
by design
FEATURES:
• ESD protection up to 2kV
• Low rDS(on) Transistor (1.5Ω MAX @ VGS=2.5V)
• Low VF Schottky Diode (0.47V MAX @ 0.5A)
SYMBOL
PD
PD
PD
TJ, Tstg
Θ
JA
SYMBOL
VDS
VGS
ID
SYMBOL
VRRM
IF
IFRM
IFSM
350
300
150
-65 to +150
357
UNITS
mW
mW
mW
°C
°C/W
UNITS
V
V
mA
UNITS
V
mA
A
A
APPLICATIONS:
• DC / DC Converters
• Battery Powered Portable Equipment
MAXIMUM RATINGS - CASE:
(TA=25°C)
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
MAXIMUM RATINGS - Q1:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
MAXIMUM RATINGS - D1:
(TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp≤1.0ms
Peak Forward Surge Current, tp= 8.0ms
30
8.0
450
40
500
3.5
10
ELECTRICAL CHARACTERISTICS - Q1:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=8.0V, VDS=0
IDSS
VDS=30V, VGS=0
BVDSS
VGS=0, ID=100μA
30
VGS(th)
VDS=VGS, ID=250μA
0.5
VSD
VGS=0, IS=100mA
0.5
VGS=4.5V, ID=430mA
rDS(ON)
rDS(ON)
VGS=2.5V, ID=200mA
rDS(ON)
VGS=1.8V, ID=100mA
gFS
VDS =10V, ID=100mA
200
Notes:
(1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm
2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm
2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm
2
MAX
3.0
1.0
1.0
1.1
1.1
2.0
3.3
UNITS
μA
μA
V
V
V
Ω
Ω
Ω
mS
R2 (2-August 2011)
CMLM0584
Multi Discrete Module
™
SURFACE MOUNT SILICON
P-CHANNEL MOSFET AND
LOW VF SCHOTTKY DIODE
ELECTRICAL
SYMBOL
Qg(tot)
Qgs
Qgd
Crss
Ciss
Coss
ELECTRICAL
SYMBOL
IR
IR
BVR
VF
VF
VF
VF
VF
CT
CHARACTERISTICS - Q1 - Continued:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MAX
VDS=10V, VGS=4.5, ID=1.0A
0.88
VDS=10V, VGS=4.5, ID=1.0A
0.35
VDS=10V, VGS=4.5, ID=1.0A
0.128
VDS=25V, VGS=0, f=1.0MHz
10
VDS=25V, VGS=0, f=1.0MHz
55
VDS=25V, VGS=0, f=1.0MHz
15
CHARACTERISTICS - D1:
(TA=25°C)
TEST CONDITIONS
VR=10V
VR=30V
IR=500μA
IF=100μA
IF=1.0mA
IF=10mA
IF=100mA
IF=500mA
VR=1.0V, f=1.0MHz
MIN
MAX
20
100
0.13
0.21
0.27
0.35
0.47
50
UNITS
nC
nC
nC
pF
pF
pF
40
UNITS
μA
μA
V
V
V
V
V
V
pF
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Gate Q1
2) Source Q1
3) Cathode D1
4) Anode D1
5) Anode D1
6) Drain Q1
MARKING CODE: 58C
R2 (2-August 2011)
w w w. c e n t r a l s e m i . c o m
MCU
京公网安备 11010802033920号
EEWORLD
