CR08AS-12C datasheet, PDF - EEWORLD Datasheet

CR08AS-12C: DescriptionSILICON CONTROLLED RECTIFIER,600V V(DRM),800MA I(T),SOT-89; CategoryAnalog mixed-signal IC Trigger device; File Size101KB，7 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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CR08AS-12C Overview

SILICON CONTROLLED RECTIFIER,600V V(DRM),800MA I(T),SOT-89

Parameter Name	Attribute value
Reach Compliance Code	compliant
Maximum DC gate trigger current	0.1 mA
Maximum DC gate trigger voltage	0.8 V
Maximum holding current	3 mA
Maximum leakage current	0.5 mA
On-state non-repetitive peak current	10 A
Maximum on-state voltage	1.5 V
Maximum on-state current	800 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	600 V
surface mount	YES
Trigger device type	SCR
Base Number Matches	1

To all our customers

Regarding the change of names mentioned in the document, such as Mitsubishi

Electric and Mitsubishi XX, to Renesas Technology Corp.

The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas

Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)

Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi

Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names

have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.

Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been

made to the contents of the document, and these changes do not constitute any alteration to the

contents of the document itself.

Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices

and power devices.

Renesas Technology Corp.

Customer Support Dept.

April 1, 2003

	CR08AS-12C	CR08AS-12A	CR08AS-8	CR08AS-8A	CR08AS-8B
Description	SILICON CONTROLLED RECTIFIER,600V V(DRM),800MA I(T),SOT-89	SILICON CONTROLLED RECTIFIER,600V V(DRM),800MA I(T),SOT-89	SILICON CONTROLLED RECTIFIER,400V V(DRM),800MA I(T),SOT-89	SILICON CONTROLLED RECTIFIER,400V V(DRM),800MA I(T),SOT-89	SILICON CONTROLLED RECTIFIER,400V V(DRM),800MA I(T),SOT-89
Reach Compliance Code	compliant	unknown	compliant	compliant	compliant
Maximum DC gate trigger current	0.1 mA	0.03 mA	0.1 mA	0.03 mA	0.05 mA
Maximum DC gate trigger voltage	0.8 V	0.8 V	0.8 V	0.8 V	0.8 V
Maximum holding current	3 mA	3 mA	3 mA	3 mA	3 mA
Maximum leakage current	0.5 mA	0.5 mA	0.5 mA	0.5 mA	0.5 mA
On-state non-repetitive peak current	10 A	10 A	10 A	10 A	10 A
Maximum on-state voltage	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V
Maximum on-state current	800 A	800 A	800 A	800 A	800 A
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Off-state repetitive peak voltage	600 V	600 V	400 V	400 V	400 V
surface mount	YES	YES	YES	YES	YES
Trigger device type	SCR	SCR	SCR	SCR	SCR
Maker	-	-	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation

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