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CR08AS-8

Description
SILICON CONTROLLED RECTIFIER,400V V(DRM),800MA I(T),SOT-89
CategoryAnalog mixed-signal IC    Trigger device   
File Size101KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

CR08AS-8 Overview

SILICON CONTROLLED RECTIFIER,400V V(DRM),800MA I(T),SOT-89

CR08AS-8 Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Reach Compliance Codecompliant
Maximum DC gate trigger current0.1 mA
Maximum DC gate trigger voltage0.8 V
Maximum holding current3 mA
Maximum leakage current0.5 mA
On-state non-repetitive peak current10 A
Maximum on-state voltage1.5 V
Maximum on-state current800 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage400 V
surface mountYES
Trigger device typeSCR
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003

CR08AS-8 Related Products

CR08AS-8 CR08AS-12A CR08AS-12C CR08AS-8A CR08AS-8B
Description SILICON CONTROLLED RECTIFIER,400V V(DRM),800MA I(T),SOT-89 SILICON CONTROLLED RECTIFIER,600V V(DRM),800MA I(T),SOT-89 SILICON CONTROLLED RECTIFIER,600V V(DRM),800MA I(T),SOT-89 SILICON CONTROLLED RECTIFIER,400V V(DRM),800MA I(T),SOT-89 SILICON CONTROLLED RECTIFIER,400V V(DRM),800MA I(T),SOT-89
Reach Compliance Code compliant unknown compliant compliant compliant
Maximum DC gate trigger current 0.1 mA 0.03 mA 0.1 mA 0.03 mA 0.05 mA
Maximum DC gate trigger voltage 0.8 V 0.8 V 0.8 V 0.8 V 0.8 V
Maximum holding current 3 mA 3 mA 3 mA 3 mA 3 mA
Maximum leakage current 0.5 mA 0.5 mA 0.5 mA 0.5 mA 0.5 mA
On-state non-repetitive peak current 10 A 10 A 10 A 10 A 10 A
Maximum on-state voltage 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
Maximum on-state current 800 A 800 A 800 A 800 A 800 A
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C
Off-state repetitive peak voltage 400 V 600 V 600 V 400 V 400 V
surface mount YES YES YES YES YES
Trigger device type SCR SCR SCR SCR SCR
Maker Renesas Electronics Corporation - - Renesas Electronics Corporation Renesas Electronics Corporation
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