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MGFS36E2527

Description
2.5-2.7GHz HBT HYBRID IC
CategoryWireless rf/communication    Radio frequency and microwave   
File Size76KB,7 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

MGFS36E2527 Overview

2.5-2.7GHz HBT HYBRID IC

MGFS36E2527 Parametric

Parameter NameAttribute value
MakerMitsubishi
Reach Compliance Codeunknow
Characteristic impedance50 Ω
structureCOMPONENT
Gain33 dB
Maximum input power (CW)5 dBm
Maximum operating frequency2700 MHz
Minimum operating frequency2500 MHz
Maximum operating temperature85 °C
Minimum operating temperature-30 °C
RF/Microwave Device TypesNARROW BAND MEDIUM POWER
MITSUBISHI SEMICONDUCTOR
MGFS36E2527
Specifications are subject to change without notice.
2.5-2.7GHz HBT HYBRID IC
Outline Drawing
DESCRIPTION
MGFS36E2527 is a GaAs RF amplifier designed
for WiMAX CPE.
4.5
1.0
FEATURES
InGaP HBT Device
6V Operation
27dBm Linear Output Power
33dB Linear Gain
Integrated Output Power Detector
Integrated 1-bit 19dB Step Attenuator
50ohms Matched
Surface Mount Package
RoHS Compliant Package
4.5
36E
2527
(Lot No.)
10
9
8
7
6
APPLICATIONS
IEEE802.16-2004, IEEE802.16e-2005
1
2
3
4
5
1
2
3
4
5
6
7
8
9
10
Pin
Vc (Vcb)
Vc (Vc1)
Vc (Vc2)
Vc (Vc3)
Pout
Po_det
GND
Vref
Vcont
DIM IN mm
(X-ray Top View)
FUNCTIONAL BLOCK DIAGRAM
Vc1
1000pF
Vc2
Vc3
1000pF
1000pF
Pin
Vcont
(0/3V)
Vcb
1000pF
Pout
Bias Circuit
Vref
Po_det
33kohms
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the
possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give
due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits,
(ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
(1/7)
January-2008
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