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NYC0102BLT1G

Description
0.25 A, 200 V, SCR, TO-236AB
CategoryAnalog mixed-signal IC    Trigger device   
File Size93KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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NYC0102BLT1G Overview

0.25 A, 200 V, SCR, TO-236AB

NYC0102BLT1G Parametric

Parameter NameAttribute value
Brand NameON Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompli
ECCN codeEAR99
Samacsys DescriptiSilicon Controlled Rectifier, 200V 0.25A, 200uA 3-pin, SOT-23
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current0.2 mA
Maximum DC gate trigger voltage0.8 V
Maximum holding current6 mA
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
On-state non-repetitive peak current7 A
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum rms on-state current0.25 A
Off-state repetitive peak voltage200 V
Repeated peak reverse voltage200 V
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
NYC0102BLT1G
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Features
Designed and tested for highly−sensitive triggering in low-power
switching applications.
http://onsemi.com
High dv/dt
Gating Current < 200
mA
Miniature SOT−23 Package for High Density PCB
This is a Halogen−Free Device
This is a Pb−Free Device
Rating
Symbol
V
DRM,
V
RRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
FGM
V
RGM
T
J
T
stg
Value
Unit
V
200
0.25
7.0
0.2
0.1
0.02
0.5
8.0
−40
to
+125
−40
to
+150
A
A
A
2
s
W
W
A
V
°C
°C
0.25 AMP, 200 VOLT SCRs
G
A
K
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Peak Repetitive Off−State Voltage (Note 1)
(R
GK
= IK, T
J
=
*40
to +110°C, Sine
Wave, 50 to 60 Hz
On-State Current RMS
(180° Conduction Angle, T
C
= 80°C)
Peak Non-repetitive Surge Current,
T
A
= 25°C, (1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width
1.0
msec,
T
A
= 25°C)
Forward Average Gate Power
(t = 8.3 msec, T
A
= 25°C)
Forward Peak Gate Current
(Pulse Width
20
ms,
T
A
= 25°C)
Reverse Peak Gate Voltage
(Pulse Width
1.0
ms,
T
A
= 25°C)
Operating Junction Temperature Range
@ Rated V
RRM
and V
DRM
Storage Temperature Range
3
1
2
MARKING
DIAGRAM
C2B MG
G
1
SOT−23
CASE 318
STYLE 8
C2B = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary de-
pending upon manufacturing location.
PIN ASSIGNMENT
1
2
3
Cathode
Gate
Anode
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
T
A
= 25°C
Thermal Resistance, Junction−to−Ambient
Symbol
P
D
R
qJA
Max
225
380
Unit
mW
°C/W
ORDERING INFORMATION
Device
NYC0102BLT1G
Package
SOT−23
(Pb−Free)
Shipping
3000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2008
December, 2008
Rev. 0
1
Publication Order Number:
NYC0102BL/D
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