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NAND04GW3B2DZL1F

Description
512M X 8 FLASH 3V PROM, 25000 ns, PDSO48
Categorystorage    storage   
File Size2MB,69 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
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NAND04GW3B2DZL1F Overview

512M X 8 FLASH 3V PROM, 25000 ns, PDSO48

NAND04GW3B2DZL1F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeLGA
package instructionVBGA, LGA52(UNSPEC)
Contacts52
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time25000 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B52
length17 mm
memory density4294967296 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size4K
Number of terminals52
word count536870912 words
character code512000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512MX8
Package body materialPLASTIC/EPOXY
encapsulated codeVBGA
Encapsulate equivalent codeLGA52(UNSPEC)
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE
page size2K words
Parallel/SerialPARALLEL
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height0.65 mm
Department size128K
Maximum standby current0.00005 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
switch bitNO
typeNAND TYPE
width12 mm
Base Number Matches1
NAND04G-B2D, NAND08G-BxC
4 Gbit, 8 Gbit, 2112 byte/1056 word page
multiplane architecture, 1.8 V or 3 V, NAND Flash memories
Preliminary Data
Features
High density NAND Flash Memory
– Up to 8 Gbit memory array
– Cost-effective solution for mass storage
applications
NAND interface
– x8 or 16x bus width
– Multiplexed address/data
Supply voltage: 1.8 V or 3.0 V device
Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
Block size
– x8 device: (128K + 4 K spare) bytes
– x16 device: (64K + 2 K spare) words
Multiplane architecture
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
Page read/program
– Random access: 25 µs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 µs (typ)
– Multiplane page program time (2 pages):
200 µs (typ)
Copy back program with automatic error
detection code (EDC)
Cache read mode
Fast block erase
– Block erase time: 1.5 ms (typ)
– Multiblock erase time (2 blocks):
1.5 ms (typ)
Status Register
Electronic signature
Chip Enable ‘don’t care’
Serial number option
NAND08G-BxC
TSOP48 12 x 20 mm (N)
LGA
LGA52 12 x 17 mm (ZL)
r
Data protection:
– Hardware program/erase disabled during
power transitions
– Non-volatile protection option
ONFI 1.0 compliant command set
Data integrity
– 100 000 program/erase cycles (with ECC
(error correction code))
– 10 years data retention
ECOPACK
®
packages
Device Summary
Part number
NAND04GR3B2D
Table 1.
Reference
NAND04G-B2D
NAND04GW3B2D
NAND04GR4B2D
(1)
NAND04GW4B2D
(1)
NAND08GR3B2C,
NAND08GW3B2C
NAND08GR4B2C
(1)
NAND08GW4B2C
(1)
NAND08GR3B4C
NAND08GW3B4C
1. x16 organization only available for MCP products.
December 2007
Rev 3
1/69
www.numonyx.com
1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.

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