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NAND08GW3B2DN1E

Description
512M X 8 FLASH 3V PROM, 25000 ns, PDSO48
Categorystorage   
File Size2MB,69 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

NAND08GW3B2DN1E Overview

512M X 8 FLASH 3V PROM, 25000 ns, PDSO48

NAND08GW3B2DN1E Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals48
Minimum operating temperature-40 Cel
Maximum operating temperature85 Cel
Rated supply voltage3 V
Minimum supply/operating voltage2.7 V
Maximum supply/operating voltage3.6 V
Processing package description12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
stateTransferred
ypeNAND TYPE
sub_categoryFlash Memories
ccess_time_max25000 ns
command_user_interfaceYES
data_pollingNO
jesd_30_codeR-PDSO-G48
storage density4.29E9 bit
Memory IC typeFLASH
memory width8
umber_of_sectors_size4K
Number of digits5.37E8 words
Number of digits512M
operating modeASYNCHRONOUS
organize512MX8
Packaging MaterialsPLASTIC/EPOXY
ckage_codeTSSOP
ckage_equivalence_codeTSSOP48,.8,20
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
ge_size__words_2K
serial parallelPARALLEL
wer_supplies__v_3/3.3
gramming_voltage__v_3
qualification_statusCOMMERCIAL
eady_busyYES
seated_height_max1.2 mm
sector_size__words_128K
standby_current_max5.00E-5 Amp
Maximum supply voltage0.0300 Amp
surface mountYES
CraftsmanshipCMOS
Temperature levelINDUSTRIAL
terminal coatingNOT SPECIFIED
Terminal formGULL WING
Terminal spacing0.5000 mm
Terminal locationDUAL
ggle_biNO
length18.4 mm
width12 mm
NAND04G-B2D, NAND08G-BxC
4 Gbit, 8 Gbit, 2112 byte/1056 word page
multiplane architecture, 1.8 V or 3 V, NAND Flash memories
Preliminary Data
Features
High density NAND Flash Memory
– Up to 8 Gbit memory array
– Cost-effective solution for mass storage
applications
NAND interface
– x8 or 16x bus width
– Multiplexed address/data
Supply voltage: 1.8 V or 3.0 V device
Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
Block size
– x8 device: (128K + 4 K spare) bytes
– x16 device: (64K + 2 K spare) words
Multiplane architecture
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
Page read/program
– Random access: 25 µs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 µs (typ)
– Multiplane page program time (2 pages):
200 µs (typ)
Copy back program with automatic error
detection code (EDC)
Cache read mode
Fast block erase
– Block erase time: 1.5 ms (typ)
– Multiblock erase time (2 blocks):
1.5 ms (typ)
Status Register
Electronic signature
Chip Enable ‘don’t care’
Serial number option
NAND08G-BxC
TSOP48 12 x 20 mm (N)
LGA
LGA52 12 x 17 mm (ZL)
r
Data protection:
– Hardware program/erase disabled during
power transitions
– Non-volatile protection option
ONFI 1.0 compliant command set
Data integrity
– 100 000 program/erase cycles (with ECC
(error correction code))
– 10 years data retention
ECOPACK
®
packages
Device Summary
Part number
NAND04GR3B2D
Table 1.
Reference
NAND04G-B2D
NAND04GW3B2D
NAND04GR4B2D
(1)
NAND04GW4B2D
(1)
NAND08GR3B2C,
NAND08GW3B2C
NAND08GR4B2C
(1)
NAND08GW4B2C
(1)
NAND08GR3B4C
NAND08GW3B4C
1. x16 organization only available for MCP products.
December 2007
Rev 3
1/69
www.numonyx.com
1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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