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NAND08GW3B2BN6F

Description
512M X 8 FLASH 3V PROM, PDSO48
Categorystorage    storage   
File Size1005KB,58 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
Download Datasheet Parametric View All

NAND08GW3B2BN6F Overview

512M X 8 FLASH 3V PROM, PDSO48

NAND08GW3B2BN6F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeTSOP
package instructionTSOP1,
Contacts48
Reach Compliance Codecompli
ECCN code3A991.B.1.A
Maximum access time25 ns
JESD-30 codeR-PDSO-G48
JESD-609 codee3
length18.4 mm
memory density8589934592 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals48
word count1073741824 words
character code1000000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1GX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width12 mm
NAND04GW3B2B
NAND08GW3B2A
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page
3V, NAND Flash Memories
Features
High density NAND Flash Memory
– up to 8 Gbit memory array
– Up to 256 Mbit spare area
– Cost effective solution for mass storage
applications
NAND Interface
– x8 bus width
– Multiplexed Address/ Data
Supply voltage
– 3.0V device: V
DD
= 2.7 to 3.6V
Page size
– (2048 + 64 spare) Bytes
Block size
– (128K + 4K spare) Bytes
Page Read/Program
– Random access: 25µs (max)
– Sequential access: 30ns (min)
– Page program time: 200µs (typ)
Copy Back Program mode
– Fast page copy without external buffering
Cache Program and Cache Read modes
– Internal Cache Register to improve the
program and read throughputs
Fast Block Erase
– Block erase time: 2ms (typ)
Status Register
Electronic Signature
Chip Enable ‘don’t care’
– for simple interface with microcontroller
Serial Number option
TSOP48 12 x 20mm
Data protection
– Hardware and Software Block Locking
– Hardware Program/Erase locked during
Power transitions
Data integrity
– 100,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
ECOPACK
®
package
Development tools
– Error Correction Code software and
hardware models
– Bad Blocks Management and Wear
Leveling algorithms
– File System OS Native reference software
– Hardware simulation models
December 2007
Rev 5
1/58
www.numonyx.com
1
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