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NAND08GW3C2AN1F

Description
8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
Categorystorage    storage   
File Size1MB,58 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
Download Datasheet Parametric View All

NAND08GW3C2AN1F Overview

8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory

NAND08GW3C2AN1F Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTSOP
package instructionTSSOP, TSSOP48,.8,20
Contacts48
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time60000 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G48
length18.4 mm
memory density8589934592 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size8K
Number of terminals48
word count1073741824 words
character code1000000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1GX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
page size2K words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size128K
Maximum standby current0.00005 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNAND TYPE
width12 mm
Base Number Matches1
NAND08GW3C2A
NAND16GW3C4A
8/16 Gbit, 2112 byte page,
3 V supply, multilevel, multiplane, NAND Flash memory
Features
High density multilevel cell (MLC) Flash
memory
– Up to 16 Gbit memory array
– Up to 512 Mbit spare area
– Cost-effective solutions for mass storage
applications
NAND interface
– x 8 bus width
– Multiplexed address/data
Supply voltage: V
DD
= 2.7 to 3.6 V
Page size: (2048 + 64 spare) bytes
Block size: (256K + 8K spare) bytes
Multiplane architecture
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
Page read/program
– Random access: 60 µs (max)
– Sequential access: 25 ns (min)
– Page program operation time: 800 µs (typ)
Multipage program time (2 pages): 800 µs (typ)
Fast block erase
– Block erase time: 2.5 ms (typ)
Multiblock erase time (2 blocks): 2.5 ms (typ)
Status register
Electronic signature
Serial number option
Chip enable ‘don’t care’
TSOP48 12 x 20 mm (N)
LGA52 12 x 17 mm (N)
Data protection
– Hardware program/erase locked during
power transitions
Development tools
– Error correction code models
– Bad block management and wear leveling
algorithm
– HW simulation models
Data integrity
– 10,000 program/erase cycles (with ECC)
– 10 years data retention
ECOPACK
®
packages available
January 2008
Rev 2
1/58
www.numonyx.com
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