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NAND512W3A2CN6F

Description
64M X 8 FLASH 1.8V PROM, 15000 ns, PBGA63
Categorystorage    storage   
File Size1MB,51 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
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NAND512W3A2CN6F Overview

64M X 8 FLASH 1.8V PROM, 15000 ns, PBGA63

NAND512W3A2CN6F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeTSOP
package instructionTSSOP, TSSOP48,.8,20
Contacts48
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time12000 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G48
length18.4 mm
memory density536870912 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size4K
Number of terminals48
word count67108864 words
character code64000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
page size512 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size16K
Maximum standby current0.00005 A
Maximum slew rate0.015 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeSLC NAND TYPE
width12 mm
NAND512R3A2C NAND512R4A2C
NAND512W3A2C NAND512W4A2C
512 Mbit, 528 byte/264 word page,
1.8 V/3 V, NAND Flash memories
Features
High density NAND Flash memories
512 Mbit memory array
Cost effective solutions for mass
storage applications
x 8 or x 16 bus width
Multiplexed Address/ Data
FBGA
NAND interface
TSOP48 12 x 20 mm
Supply voltage: 1.8 V, 3.0 V
Page size
x 8 device: (512 + 16 spare) bytes
x 16 device: (256 + 8 spare) words
x 8 device: (16 K + 512 spare) bytes
x 16 device: (8 K + 256 spare) words
Random access:
12 µs (3 V)/15 µs (1.8 V) (max)
Sequential access:
30 ns (3 V)/50 ns (1.8 V) (min)
Page Program time: 200 µs (typ)
Block size
VFBGA55 8 x 10 x 1 mm
VFBGA63 9 x 11 x 1 mm
Hardware Data Protection
Program/Erase locked during Power
transitions
100,000 Program/Erase cycles (with
ECC)
10 years Data Retention
Page Read/Program
Data integrity
Copy Back Program mode
Fast Block Erase: 2 ms (typ)
Status Register
Electronic signature
Chip Enable ‘don’t care’
Serial Number option
Device summary
Reference
ECOPACK
®
packages
Development tools
Error Correction Code models
Bad Blocks Management and Wear
Leveling algorithms
Hardware simulation models
Table 1.
Part number
NAND512R3A2C
NAND512R4A2C
(1)
NAND512-A2C
NAND512W3A2C
NAND512W4A2C
(1)
1. x16 organization only available for MCP.
January 2008
Rev 2
1/51
www.numonyx.com
1
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