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NTD3808N-1G

Description
Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK
CategoryDiscrete semiconductor    The transistor   
File Size92KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

NTD3808N-1G Overview

Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK

NTD3808N-1G Parametric

Parameter NameAttribute value
Brand NameON Semiconduc
Is it lead-free?Lead free
MakerON Semiconductor
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts4
Manufacturer packaging code369
Reach Compliance Code_compli
ECCN codeEAR99
NTD3808N
Power MOSFET
16 V, 76 A, Single N-Channel, DPAK/IPAK
Features
Trench Technology
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb-Free Devices
http://onsemi.com
V
(BR)DSS
16 V
R
DS(ON)
MAX
5.8 mW @ 10 V
I
D
MAX
76 A
Applications
DC-DC Converters
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain Current
t
p
=10ms
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain-to-Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 14 A
pk
, L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
DmaxPkg
T
J
,
T
STG
I
S
dV/dt
EAS
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
16
±16
17
13
2.6
12
9.1
1.3
76
59
52
152
35
-55 to
+175
51
6
29.4
W
A
A
°C
A
V/ns
mJ
YWW
38
08NG
4
Drain
W
A
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
W
4
A
1 2
3
Unit
V
V
A
G
8.5 mW @ 4.5 V
D
S
N-CHANNEL MOSFET
4
4
1
2 3
1
3
CASE 369AC
CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
YWW
38
08NG
4
Drain
YWW
38
08NG
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
1 2 3
1 Drain 3
Gate Drain Source
Gate Source
1 2 3
Gate Drain Source
Y
WW
3808N
G
= Year
= Work Week
= Device Code
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
©
Semiconductor Components Industries, LLC, 2007
1
December, 2007 - Rev. 0
Publication Order Number:
NTD3808N/D

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Brand Name ON Semiconduc ON Semiconduc ON Semiconduc -
Is it lead-free? Lead free Lead free Lead free -
Maker ON Semiconductor ON Semiconductor ON Semiconductor -
package instruction SMALL OUTLINE, R-PSSO-F3 LEAD FREE, CASE 369D-01, IPAK-3 LEAD FREE, CASE 369AA-01, DPAK-3 -
Contacts 4 3 3 -
Manufacturer packaging code 369 369AD 369C -
Reach Compliance Code _compli _compli _compli -
ECCN code EAR99 EAR99 EAR99 -
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