NTD3808N
Power MOSFET
16 V, 76 A, Single N-Channel, DPAK/IPAK
Features
•
•
•
•
•
Trench Technology
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb-Free Devices
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V
(BR)DSS
16 V
R
DS(ON)
MAX
5.8 mW @ 10 V
I
D
MAX
76 A
Applications
•
DC-DC Converters
•
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain Current
t
p
=10ms
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain-to-Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 14 A
pk
, L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
DmaxPkg
T
J
,
T
STG
I
S
dV/dt
EAS
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
16
±16
17
13
2.6
12
9.1
1.3
76
59
52
152
35
-55 to
+175
51
6
29.4
W
A
A
°C
A
V/ns
mJ
YWW
38
08NG
4
Drain
W
A
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
W
4
A
1 2
3
Unit
V
V
A
G
8.5 mW @ 4.5 V
D
S
N-CHANNEL MOSFET
4
4
1
2 3
1
3
CASE 369AC
CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
YWW
38
08NG
4
Drain
YWW
38
08NG
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
1 2 3
1 Drain 3
Gate Drain Source
Gate Source
1 2 3
Gate Drain Source
Y
WW
3808N
G
= Year
= Work Week
= Device Code
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
©
Semiconductor Components Industries, LLC, 2007
1
December, 2007 - Rev. 0
Publication Order Number:
NTD3808N/D
NTD3808N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction-to-Case (Drain)
Junction-to-TAB (Drain)
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – Steady State (Note 2)
1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJC-TAB
R
qJA
R
qJA
Value
2.9
3.5
57
120
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 16 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
16
16.9
1.0
10
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate-to-Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain-to-Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
=
±16
V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
1.5
5.8
2.5
V
mV/°C
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 15 A
I
D
= 15 A
4.8
6.7
42
5.8
8.5
mW
S
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
g
FS
V
DS
= 1.5 V, I
D
= 15 A
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 10 V, V
DS
= 12 V, I
D
= 15 A
V
GS
= 4.5 V, V
DS
= 12 V, I
D
= 15 A
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 12 V
1660
560
315
14.1
1.5
4.8
6.1
27.8
nC
nC
21
pF
t
d(ON)
t
r
t
d(OFF)
t
f
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 12 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 4.5 V, V
DS
= 12 V,
I
D
= 15 A, R
G
= 3.0
W
14
52
17
9
10
21
29
16
ns
ns
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
5. Assume standoff of 110 mm
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2
NTD3808N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 15 A
T
J
= 25°C
T
J
= 125°C
0.84
0.71
21
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 15 A
9.9
11.1
8.8
nC
ns
1.0
V
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance, DPAK
Drain Inductance, IPAK (Note 5)
Gate Inductance
Gate Resistance
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
D
L
G
R
G
T
A
= 25°C
2.49
0.0164
1.88
3.46
1.0
nH
W
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
5. Assume standoff of 110 mm
ORDERING INFORMATION
Device
NTD3808NT4G
NTD3808N-1G
NTD3808N-35G
Package
DPAK
(Pb-Free)
IPAK
(Pb-Free)
IPAK Trimmed Lead
(3.5
"
0.15 mm)
(Pb-Free)
Shipping
†
2500 / Tape & Reel
75 Units / Rail
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NTD3808N
TYPICAL PERFORMANCE CURVES
100
90 10 V
I
D
, DRAIN CURRENT (A)
80
70
60
50
40
30
20
10
0
0
1
2
3
4
3.4 V
3.2 V
3.0 V
2.8 V
5
4.2 V
4.5 V
6.0 V
T
J
= 25°C
4.0 V
3.8 V
3.6 V
I
D
, DRAIN CURRENT (A)
100
90
80
70
60
50
40
30
20
10
0
0
1
2
3
4
5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
V
DS
≥
10 V
Figure 1. On-Region Characteristics
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
0.048
0.043
0.038
0.033
0.028
0.023
0.018
0.013
0.008
0.003
3
4
5
6
7
8
9
10
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
I
D
= 15 A
T
J
= 25°C
0.010
Figure 2. Transfer Characteristics
T
J
= 25°C
0.008
V
GS
= 4.5 V
0.006
V
GS
= 10 V
0.004
0.002
0
10
20
30
40
50
60
70
80
90 100
I
D
, DRAIN CURRENT (A)
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
1.6
I
D
= 15 A
1.4 V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
10000
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 175°C
1.2
T
J
= 125°C
1
100
0.8
0.6
-50
10
-25
0
25
50
75
100
125
150
175
5
7.5
10
12.5
15
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
vs. Drain Voltage
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4
NTD3808N
TYPICAL PERFORMANCE CURVES
2500
V
GS
= 0 V
C, CAPACITANCE (pF)
2000
C
iss
T
J
= 25°C
V
GS
, GATE-TO-SOURCE VOLTAGE
(V)
10
Q
gt
8
1500
6
1000
C
oss
C
rss
0
0
2
4
6
8
10
12
DRAIN-TO-SOURCE VOLTAGE (V)
14
16
4
Q
gs
2
Q
gd
I
d
= 15 A
T
J
= 25°C
0
4
8
12
16
20
Q
G
, TOTAL GATE CHARGE (nC)
24
28
500
0
Figure 7. Capacitance Variation
Figure 8. Gate-To-Source and Drain-To-Source
Voltage vs. Total Charge
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0.4
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 12 V
I
D
= 15 A
V
GS
= 10 V
t, TIME (ns)
100
V
GS
= 0 V
T
J
= 25°C
t
d(off)
t
f
t
r
t
d(on)
10
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.5
0.6
0.7
0.8
0.9
1
V
SD
, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
EAS, SINGLE PULSE DRAIN-TO-SOURCE
AVALANCHE ENERGY (mJ)
1000
30
Figure 10. Diode Forward Voltage vs. Current
I
D
= 14 A
25
20
15
10
5
0
25
I
D
, DRAIN CURRENT (A)
100
10
ms
100
ms
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1 ms
10 ms
dc
1
0.1
0.1
1
10
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
100
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
175
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
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