NTD5805N, NVD5805N
Power MOSFET
Features
40 V, 51 A, Single N−Channel, DPAK
•
•
•
•
Low R
DS(on)
High Current Capability
Avalanche Energy Specified
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
Applications
www.onsemi.com
V
(BR)DSS
40 V
R
DS(on)
MAX
16 mW @ 5.0 V
9.5 mW @ 10 V
D
I
D
MAX
51 A
•
•
•
•
LED Backlight Driver
CCFL Backlight
DC Motor Control
Power Supply Secondary Side Synchronous Rectification
N−Channel
G
S
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
−
Continuous
Gate−to−Source Voltage
−
Non−Repetitive (t
p
< 10
mS)
Continuous Drain
Current (R
qJC
)
(Note 1)
Power Dissipation
(R
qJC
) (Note 1)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
P
D
I
DM
T
J
, T
stg
I
S
E
AS
Symbol
V
DSS
V
GS
V
GS
I
D
Value
40
±20
±30
51
36
47
85
−55
to
175
30
80
W
A
°C
A
mJ
Unit
V
V
V
A
1 2
3
4
DPAK
CASE 369C
(Surface Mount)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
AYWW
58
05NG
2
1 Drain 3
Gate Source
A
Y
WW
5805N
G
= Assembly Location*
= Year
= Work Week
= Device Code
= Pb−Free Package
* The Assembly Location Code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter
pin), the front side assembly code may be blank.
t
p
= 10
ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V, R
G
= 25
W,
I
L(pk)
= 40 A, L = 0.1 mH, V
DS
= 40 V)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient
−
Steady State (Note 1)
Symbol
R
qJC
R
qJA
Value
3.2
107
Unit
°C/W
1. Surface−mounted on FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
April, 2017
−
Rev. 6
1
Publication Order Number:
NTD5805N/D
NTD5805N, NVD5805N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
gFS
V
GS
= 10 V, I
D
= 15 A
V
GS
= 5.0 V, I
D
= 10 A
Forward Transconductance
V
DS
= 15 V, I
D
= 15 A
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
ta
tb
Q
RR
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 30 A
T
J
= 25°C
T
J
= 150°C
V
GS
= 10 V, V
DD
= 32 V,
I
D
= 30 A, R
G
= 2.5
W
10.2
17.9
22.9
4.5
ns
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 10 V, V
DS
= 32 V,
I
D
= 30 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
1725
220
160
33
2.0
7.2
9.8
80
nC
pF
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25°C
T
J
= 150°C
V
GS
= 0 V, I
D
= 250
mA
40
40.8
1.0
100
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Co-
efficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.5
7.04
7.6
10.9
8.54
3.5
V
mV/°C
9.5
16
mW
S
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 10 A
0.83
0.65
24.8
14.6
10.2
15.5
nC
ns
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NTD5805N, NVD5805N
TYPICAL PERFORMANCE CHARACTERISTICS
100
90
I
D
, DRAIN CURRENT (A)
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
4.0 V
3.5 V
3
4.5 V
V
GS
= 7 V
−
5.5 V
100
5.2 V
I
D
, DRAIN CURRENT (A)
5.0 V
75
V
DS
≥
10 V
10 V
80 T
J
= 25°C
50
T
J
= 100°C
25
T
J
= 25°C
0
T
J
=
−55°C
2
3
4
5
6
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.021
0.019
0.017
0.015
0.013
0.011
0.009
0.007
4
5
6
7
8
9
10
I
D
= 30 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.05
Figure 2. Transfer Characteristics
T
J
= 25°C
0.04
0.03
0.02
0.01
0
10
V
GS
= 5 V
V
GS
= 10 V
15
20
25
30
35
40
45
50
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Drain Current
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50 −25
I
D
= 51 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
10,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
100
T
J
= 100°C
0
25
50
75
100
125
150
175
10
2
12
22
32
42
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
NTD5805N, NVD5805N
TYPICAL PERFORMANCE CHARACTERISTICS
3000
20
40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
= 0 V
T
J
= 25°C
C
iss
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
15
V
DS
QT
V
GS
30
2000
10
Q
gs
5
Q
gd
20
1000
C
oss
0
10
5
Vgs
C
rss
0
5
10
Vds
15
20
25
30
35
40
10
I
D
= 30 A
T
J
= 25°C
0
10
20
30
0
0
40
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 32 V
I
D
= 30 A
V
GS
= 10 V
t, TIME (ns)
100
30
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
20
t
d(off)
t
f
t
r
t
d(on)
10
10
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
100
10
ms
10
V
GS
= 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
1
10
100
ms
1 ms
10 ms
dc
1
0.1
0.1
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
www.onsemi.com
4
NTD5805N, NVD5805N
TYPICAL PERFORMANCE CHARACTERISTICS
10
D = 0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
r(t), Effective Transient Thermal Resistance
(°C/W)
0.01
0.00001
0.0001
0.001
t, PULSE TIME (s)
0.01
0.1
1
Figure 12. Thermal Response
ORDERING INFORMATION
Order Number
NTD5805NT4G
NVD5805NT4G*
NVD5805NT4G−VF01
Package
DPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping
†
2500 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
www.onsemi.com
5
京公网安备 11010802033920号
EEWORLD
