NTD5805NG datasheet, PDF - EEWORLD Datasheet

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NTD5805NG: Description51 A, 40 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size116KB，6 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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NTD5805NG Overview

51 A, 40 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET

NTD5805NG Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ON Semiconductor
package instruction	LEAD FREE, CASE 369D-01, DPAK-3
Contacts	3
Manufacturer packaging code	CASE 369D-01
Reach Compliance Code	compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	80 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (ID)	51 A
Maximum drain-source on-resistance	0.0095 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	85 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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NTD5805N, NVD5805N

Power MOSFET

Features

40 V, 51 A, Single N−Channel, DPAK

•

Low R

DS(on)

High Current Capability

Avalanche Energy Specified

NVD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•

These Devices are Pb−Free and are RoHS Compliant

Applications

www.onsemi.com

(BR)DSS

40 V

DS(on)

MAX

16 mW @ 5.0 V

9.5 mW @ 10 V

MAX

51 A

•

LED Backlight Driver

CCFL Backlight

DC Motor Control

Power Supply Secondary Side Synchronous Rectification

N−Channel

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

−

Continuous

Gate−to−Source Voltage

−

Non−Repetitive (t

< 10

mS)

Continuous Drain

Current (R

qJC

)

(Note 1)

Power Dissipation

qJC

) (Note 1)

Pulsed Drain Current

= 25°C

Steady

State

= 100°C

= 25°C

, T

stg

Symbol

DSS

Value

±20

±30

−55

175

°C

Unit

1 2

DPAK

CASE 369C

(Surface Mount)

STYLE 2

MARKING DIAGRAM

& PIN ASSIGNMENT

Drain

AYWW

05NG

1 Drain 3

Gate Source

5805N

= Assembly Location*

= Year

= Work Week

= Device Code

= Pb−Free Package

* The Assembly Location Code (A) is front side

optional. In cases where the Assembly Location is

stamped in the package bottom (molding ejecter

pin), the front side assembly code may be blank.

= 10

Operating Junction and Storage Temperature

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (V

= 50 V, V

= 10 V, R

= 25

L(pk)

= 40 A, L = 0.1 mH, V

= 40 V)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Junction−to−Case (Drain)

Junction−to−Ambient

−

Steady State (Note 1)

Symbol

qJC

qJA

Value

3.2

107

Unit

°C/W

1. Surface−mounted on FR4 board using the minimum recommended pad size.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Semiconductor Components Industries, LLC, 2014

April, 2017

−

Rev. 6

Publication Order Number:

NTD5805N/D

NTD5805NG Related Products

	NTD5805NG	NTD5805N	NVD5805NT4G-VF01
Description	51 A, 40 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET	51 A, 40 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET	MOSFET N-CH 40V 51A DPAK
Shell connection	DRAIN	DRAIN	-
Number of components	1	1	-
Number of terminals	3	2	-
surface mount	NO	Yes	-
Terminal form	THROUGH-HOLE	GULL WING	-
Terminal location	SINGLE	SINGLE	-
transistor applications	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	-

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