DMT12H090LFDF4
115V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
BV
DSS
@
T
J
max
120V
R
DS(ON)
max
90mΩ @ V
GS
= 10V
115V
100mΩ @ V
GS
= 4.5V
I
D
max
T
A
= +25°C
3.4A
2.3A
Features and Benefits
•
•
•
•
•
0.4mm Profile—Ideal for Low Profile Applications
PCB Footprint of 4mm
2
100% Unclamped Inductive Switching (UIS) Test in Production—
Ensures More Reliable and Robust End Application
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) yet maintain superior switching performance,
which makes it ideal for high-efficiency power management
applications.
Mechanical Data
•
•
•
•
•
•
Case: X2-DFN2020-6(Type W)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish—NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e4
Weight: 0.006 grams (Approximate)
Applications
•
•
DC-DC Primary Switch
Load Switch
X2-DFN2020-6
D
G
Pin1
Top View
Bottom View
Pin Out
Bottom View
S
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMT12H090LFDF4-7
DMT12H090LFDF4-13
Notes:
Case
X2-DFN2020-6(Type W)
X2-DFN2020-6(Type W)
Quantity Per Reel
3000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, see http://www.diodes.com/products/packages.html.
Marking Information
X2-DFN2020-6(Type W)
X4
X4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2018
F
Jan
1
Feb
2
2019
G
Mar
3
2020
H
Apr
4
YM
2021
I
May
5
Jun
6
2022
J
Jul
7
2023
K
Aug
8
2024
L
Sep
9
Oct
O
2025
M
Nov
N
2026
N
Dec
D
DMT12H090LFDF4
D
atasheet number: DS40734 Rev. 1 - 1
1 of 7
www.diodes.com
September 2018
© Diodes Incorporated
DMT12H090LFDF4
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
= 10V (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Body Diode Continuous Current (Note 6)
Pulsed Body Diode Continuous Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.3mH
Avalanche Energy, L = 0.3mH
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
SM
I
AS
E
AS
Value
115
±12
3.4
2.7
15
4
15
2.3
0.79
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
P
D
R
ϴJA
P
D
R
ϴJA
R
ϴJC
T
J,
T
STG
Value
0.9
0.6
141
1.6
1.0
78
15
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
115
—
—
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
251
80
3
7
6
0.3
2
2.2
2.6
9.3
3.9
83
189
Max
—
1
±100
2.2
90
100
300
350
1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
Test Condition
V
GS
= 0V, I
D
= 10mA
V
DS
= 92V, V
GS
= 0V
V
GS
= ±9.6V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 3.5A
V
GS
= 4.5V, I
D
= 3.0A
V
GS
= 3.8V, I
D
= 1.0A
V
GS
= 3V, I
D
= 0.5A
V
GS
= 0V, I
S
= 2.4A
V
DS
= 50V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 50V, I
D
= 4.5A,
V
GS
= 10V
Static Drain-Source On-Resistance
mΩ
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
V
DS
= 50V, R
L
= 11Ω
V
GS
= 10V, R
GEN
= 3Ω
I
F
= 4.5A, di/dt = 300A/μs
5. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMT12H090LFDF4
D
atasheet number: DS40734 Rev. 1 - 1
2 of 7
www.diodes.com
September 2018
© Diodes Incorporated
DMT12H090LFDF4
20
18
16
V
GS
= 5V
V
GS
= 10V
20
V
GS
= 4.5V
V
GS
= 4V
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
14
12
10
8
6
4
2
0
V
GS
= 2.5V
V
GS
= 3V
V
GS
= 3.5V
I
D
, DRAIN CURRENT (A)
15
10
T
A
= 85°C
5
T
A
= 25°C
T
A
= 125°C
T
A
= 150°C
T
A
= -55°C
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
5
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
R
D S(ON )
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.075
0.07
0.065
0.06
0.055
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0
2
4
6
8
10
12
14
16
18
20
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 3.8V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.08
0.2
0.18
0.16
0.14
I
D
= 3.5A
0.12
0.1
0.08
0.06
0.04
0.02
0
2
4
6
8
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
10
I
D
= 1A
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.1
0.09
0.08
0.07
0.06
V
GS
= 10V
2
1.8
1.6
1.4
1.2
1
0.8
0.6
-50
V
GS
= 3V
I
D
= 0.5A
V
GS
= 4.5V
I
D
= 3A
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
R
D S(ON )
, DRAIN-SOURCE
ON-RESISTANCE (NO RMALIZED)
0.05
0.04
0.03
0.02
0.01
0
0
2
6
8 10 12 14 16 18
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
4
20
T
A
= -55°C
T
A
= 25°C
V
GS
= 10V
I
D
= 3.5A
V
GS
= 3.8V
I
D
= 1A
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
DMT12H090LFDF4
D
atasheet number: DS40734 Rev. 1 - 1
3 of 7
www.diodes.com
September 2018
© Diodes Incorporated
DMT12H090LFDF4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.13
V
GS(th )
, GATE THRESHO LD VO LTAGE (V)
0.12
0.11
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
-50
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 On-Resistance Variation with Temperature
-25
V
GS
= 10V
I
D
= 3.5A
V
GS
= 3.8V
I
D
= 1A
V
GS
= 4.5V
I
D
= 3A
V
GS
= 3V
I
D
= 0.5A
1.8
1.5
I
D
= 250µA
I
D
= 1mA
1.2
0.9
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
1000
20
18
16
14
12
10
T
A
= 125°C
T
A
= 85°C
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
I
S
, SOURCE CURRENT (A)
100
C
oss
8
6
4
T
A
= 150°C
T
A
= 25°C
10
T
A
= -55°C
2
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
100
1
0
C
rss
f=1MHz
20
40
60
80
100
120
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
V
GS
GATE THRESHOLD VOLTAGE (V)
8
V
DS
= 50V
I
D
= 4.5A
10
P
W
= 100µs
-I
D
, DRAIN CURRENT (A)
6
1
P
W
= DC
P
W
= 10s
4
0.1
P
W
= 1s
P
W
= 100ms
2
0.01
0
0
1
2
3
4
5
6
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
0.001
T
J(max)
= 150°C
T
C
= 25°C
V
GS
= 10V
Single Pulse
DUT on 1*MRP Board
P
W
= 10ms
P
W
= 1ms
0.1
1
10
100
1000
-V
DS
DRAIN-SOURCE VOLTAGE (V)
Figure # SOA, Safe Operation Area
DMT12H090LFDF4
D
atasheet number: DS40734 Rev. 1 - 1
4 of 7
www.diodes.com
September 2018
© Diodes Incorporated
DMT12H090LFDF4
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
r(t), TRANSIENT THERMAL RESISTANCE
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
θ
JA
(t) = r(t) * R
JA
θ
D = Single Pulse
R
θJA
= 141°C/W
Duty Cycle, D = t1/ t2
0.001
1E-06 0.00001 0.0001 0.001
0.01
0.1
1
10
100
1000 10000 100000 1000000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
DMT12H090LFDF4
D
atasheet number: DS40734 Rev. 1 - 1
5 of 7
www.diodes.com
September 2018
© Diodes Incorporated
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