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D60T407510

Description
Power Bipolar Transistor, 400V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size442KB,8 Pages
ManufacturerPOWEREX
Websitehttp://www.pwrx.com/Home.aspx
Download Datasheet Parametric View All

D60T407510 Overview

Power Bipolar Transistor, 400V V(BR)CEO, 1-Element, NPN, Silicon

D60T407510 Parametric

Parameter NameAttribute value
package instructionDISK BUTTON, O-XXDB-X3
Reach Compliance Codeunknown
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeO-XXDB-X3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formDISK BUTTON
Polarity/channel typeNPN
Maximum power dissipation(Abs)885 W
surface mountYES
Terminal surfaceNICKEL
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
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