LDTC114TLT1G datasheet, PDF - EEWORLD Datasheet

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LDTC114TLT1G: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,; CategoryDiscrete semiconductor The transistor; File Size288KB，3 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn; Environmental Compliance

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LDTC114TLT1G Overview

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,

LDTC114TLT1G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.1 A
Minimum DC current gain (hFE)	100
Number of components	1
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.2 W
surface mount	YES
Transistor component materials	SILICON
Base Number Matches	1

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LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

•

Applications

Inverter, Interface, Driver

3

LDTC114TLT1G

Features

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

3) Only the on/off conditions need to be set for operation,

making the device design easy.

We declare that the material of product compliance with

RoHS requirements.

1

2

SOT-23

•

Absolute maximum ratings

(Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

Tj

Tstg

Limits

50

5

100

200

150

−55

to

+150

Unit

V

mA

mW

°C

1

BASE

R1

3

COLLECTOR

2

EMITTER

DEVICE MARKING AND RESISTOR VALUES

Device

LDTC114TLT1G

LDTC114TLT3G

Marking

A8E

R1 (K)

10

R2 (K)

-

Shipping

3000/Tape & Reel

10000/Tape & Reel

Electrical characteristics

(Ta=25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Input resistance

Transition frequency

∗

Characteristics of built-in transistor

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

R

1

f

T

∗

Min.

50

5

−

100

7

−

Typ.

−

250

10

250

Max.

−

0.5

0.3

600

13

−

Unit

V

µA

V

−

kΩ

MHz

I

C

=50µA

I

C

=1mA

I

E

=50µA

V

CB

=50V

V

EB

=4V

Conditions

I

C

/I

B

=10mA/1mA

V

CE

=5V,

I

C

=1mA

−

V

CE

=10V,

I

E

=−5mA,

f=100MHz

1/3

LDTC114TLT1G Related Products

	LDTC114TLT1G	LDTC114TLT3G
Description	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,
Is it Rohs certified?	conform to	conform to
Reach Compliance Code	unknown	unknown
Maximum collector current (IC)	0.1 A	0.1 A
Minimum DC current gain (hFE)	100	100
Number of components	1	1
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.2 W	0.2 W
surface mount	YES	YES
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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