Small Signal Bipolar Transistor
| Parameter Name | Attribute value |
| package instruction | , |
| Reach Compliance Code | unknown |
| Base Number Matches | 1 |
| DTD113ZL-T92-6-R | DTD113ZLG-T92-6-R | DTD113ZLG-T92-6-B | DTD113ZLG-AN3-6-R | DTD113ZL-T92-6-K | DTD113ZLG-AL3-6-R | DTD113ZL-AN3-6-R | DTD113ZLG-AE3-6-R | DTD113ZLG-T92-6-K | DTD113ZL-T92-6-B | |
|---|---|---|---|---|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor | Small Signal Bipolar Transistor | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN FREE PACKAGE-3 | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3 | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE PACKAGE-3 | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3 | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE PACKAGE-3 | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3 | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN FREE PACKAGE-3 | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE PACKAGE-3 |
| package instruction | , | , | CYLINDRICAL, O-PBCY-T3 | SMALL OUTLINE, R-PDSO-G3 | CYLINDRICAL, O-PBCY-T3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code | unknown | unknown | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
| Is it Rohs certified? | - | - | conform to | conform to | conform to | conform to | conform to | conform to | conform to | conform to |
| Maker | - | - | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD |
| Contacts | - | - | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| ECCN code | - | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | - | - | BUILT-IN BIAS RESISTOR RATIO IS 10 | BUILT-IN BIAS RESISTOR RATIO IS 10 | BUILT-IN BIAS RESISTOR RATIO IS 10 | BUILT-IN BIAS RESISTOR RATIO IS 10 | BUILT-IN BIAS RESISTOR RATIO IS 10 | BUILT-IN BIAS RESISTOR RATIO IS 10 | BUILT-IN BIAS RESISTOR RATIO IS 10 | BUILT-IN BIAS RESISTOR RATIO IS 10 |
| Maximum collector current (IC) | - | - | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A |
| Collector-emitter maximum voltage | - | - | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
| Configuration | - | - | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| Minimum DC current gain (hFE) | - | - | 82 | 82 | 82 | 82 | 82 | 82 | 82 | 82 |
| JESD-30 code | - | - | O-PBCY-T3 | R-PDSO-G3 | O-PBCY-T3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | O-PBCY-T3 | O-PBCY-T3 |
| Number of components | - | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | - | - | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Package body material | - | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | - | - | ROUND | RECTANGULAR | ROUND | RECTANGULAR | RECTANGULAR | RECTANGULAR | ROUND | ROUND |
| Package form | - | - | CYLINDRICAL | SMALL OUTLINE | CYLINDRICAL | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | - | - | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| surface mount | - | - | NO | YES | NO | YES | YES | YES | NO | NO |
| Terminal form | - | - | THROUGH-HOLE | GULL WING | THROUGH-HOLE | GULL WING | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | - | - | BOTTOM | DUAL | BOTTOM | DUAL | DUAL | DUAL | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | - | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | - | - | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | - | - | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz |
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