DB152S Thru DB157S
High Current Glass Passivated Molding Single-Phase Bridge Rectifier
Reverse Voltage 100 to 1000V
FEATURES
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Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
High current capacity with small package
Glass passivated chip junctions
Superior thermal conductivity
High IFSM
Forward Current 1.5 A
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1.
Maximum & Thermal Characteristics Ratings
at 25℃ ambient temperature unless otherwise specified.
Parameter Symbol
Maximum repetitive voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum DC reverse current TA=25
℃
at rated DC blocking voltage TA=125℃
Average rectified forward current 60Hz Sine
wave Resistance load with Ta=55℃
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
Max instantaneous forward voltage at 2.0A
Current Squared Time
Operating junction temperature
Storage temperature
Io
Symbol
V
RRM
V
RMS
V
DC
IR
DB152S
100
70
100
DB153S
200
140
200
DB154S
400
280
400
5
500
1.5
DB155S
600
420
600
DB156S
800
560
800
DB157S
1000
700
1000
Unit
V
V
V
µA
A
IFSM
VF
I t
TJ
Tstg
2
60
1.05
10
-55~150
-55~150
A
V
A sec
℃
℃
2
2
DB152S Thru DB157S
2.
Ratings and Characteristic Curves
( TA = 25°C unless otherwise noted )
Fig. 1 Derating Curve
Average Rectified Forward Current Io(A)
Fig.2 Typical Reverse Characteristics
Case Temperature Ta(℃)
Fig.3 Forward Voltage
nstantaneous Reverse Current (µA)
Percent of Rated Peak Reverse Voltage%
Fig.4 Peak Surge Forward Capability
Forward Voltage VF
Peak Surge Forward Current IFSM(A)
Forward Current (A)
Number of Cycles
3
DB152S Thru DB157S
3. Marking Identification
Note:
生产日期码包含4½数字,例如
“1018”,前两个数字“10”
表示为2010年,另外二个数字
“18”
是指第18周,即表示该产品为2010年18周生产。
型号:
DB
15
7 S
SMT
bridge reverse voltage=1000V
average rectified forward
Current=1.5A
mean:DB series bridge
4. Dimension
4