EEWORLDEEWORLDEEWORLD

Part Number

Search

D2083UK

Description
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size17KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric Compare View All

D2083UK Overview

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

D2083UK Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationCOMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F4
Number of components2
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
D2083UK
ROHS COMPLIANT
MECHANICAL DATA
B
(4 pls)
C
G
(typ)
TetraFET
80W – 28V – 1.0GHz
3
E
2
1
A
D
5
I
F
4
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
PIN 1
PIN 3
mm
13.97
5.72
45°
9.78
1.65R
23.75
1.52R
30.48
19.17
0.13
2.54
1.52
5.08
Tol.
0.26
0.13
0.13
0.13
0.13
0.13
0.13
0.26
0.02
0.13
0.13
0.50
Inches
0.550
0.225
45°
0.385
0.065R
0.935
0.060R
1.200
0.755
0.005
0.100
0.060
0.200
DRAIN 1
GATE 2
Tol.
0.010
0.005
0.005
0.005
0.005
0.005
0.005
0.010
0.001
0.005
0.005
0.020
SOURCE (COMMON) PIN 2
DRAIN 2
GATE 1
PIN 4
N
M
H
J
K
PIN 5
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
m
C
iss
C
oss
C
rss
V
GS(th)match
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Threshold Voltage
*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Threshold Matching Voltage
Between Sides
P
O
= 80W
f = 1GHz
V = 28V
I = 100mA
V = 28V
V = 20V
I = 10mA
V = 10V
T = 300µS
V
DS
= 0V
V = 28V
V = 28V
I
D
= 10mA
V
DS
= V
GS
V
GS
= -5V
I = 2A
1
65
Typ.
Max. Unit
V
3
1
7
mA
µA
V
mhos
pF
pF
pF
0.1
V
2.5
128
51
2.7
TOTAL DEVICE
I
DQ
= 2A
Thermal Resistance = 0.72 °C / W
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96

D2083UK Related Products

D2083UK D2083UKG4
Description RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Is it Rohs certified? incompatible conform to
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection SOURCE SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage 65 V 65 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-CDFM-F4 R-CDFM-F4
Number of components 2 2
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
LCD1602 Instructions
After reading the introduction of LCD1602 on the Internet, do you think that the 3rd and 5th instructions need to be used together?...
eeboyok MCU
Year-end summary--My 2016
Unconsciously, 2016 has passed. I am still single even though I am a junior. This is a funny fact:Sad:. Hi, even so, with so many single people around, I won't compare myself with those who are not si...
GDW439 Talking
STM32MP157A-DK1 Review - 3. MPU functions: SPI, ADC, I2C
This article continues the previous article on the functions of MPU and evaluates the three peripherals SPI, ADC and I2C.SPIThe SPI part of ST 's official WIKI document is still being improved. It sho...
freebsder Special Edition for Assessment Centres
Stepper motor with brake
Our company has recently launched a series of stepper motors with brakes , which are mainly suitable for vertical motion transmission. The brake only needs to be connected to 12~24VDC . When the stepp...
trinamic Industrial Control Electronics
Share: Working principle of pulse electronic fence system
The output end of the electronic fence system host generates a high-voltage pulse signal and transmits it to the front fence. After the front fence forms a loop, the signal is transmitted back to the ...
banana Industrial Control Electronics
IAR development lm3s full series tutorial three
IAR development lm3s full series tutorial three...
yuhua8688 Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2083  2793  2230  1248  559  42  57  45  26  12 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号