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D2083UKG4

Description
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size17KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
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D2083UKG4 Overview

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

D2083UKG4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationCOMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F4
JESD-609 codee4
Number of components2
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
D2083UK
ROHS COMPLIANT
MECHANICAL DATA
B
(4 pls)
C
G
(typ)
TetraFET
80W – 28V – 1.0GHz
3
E
2
1
A
D
5
I
F
4
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
PIN 1
PIN 3
mm
13.97
5.72
45°
9.78
1.65R
23.75
1.52R
30.48
19.17
0.13
2.54
1.52
5.08
Tol.
0.26
0.13
0.13
0.13
0.13
0.13
0.13
0.26
0.02
0.13
0.13
0.50
Inches
0.550
0.225
45°
0.385
0.065R
0.935
0.060R
1.200
0.755
0.005
0.100
0.060
0.200
DRAIN 1
GATE 2
Tol.
0.010
0.005
0.005
0.005
0.005
0.005
0.005
0.010
0.001
0.005
0.005
0.020
SOURCE (COMMON) PIN 2
DRAIN 2
GATE 1
PIN 4
N
M
H
J
K
PIN 5
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
m
C
iss
C
oss
C
rss
V
GS(th)match
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Threshold Voltage
*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Threshold Matching Voltage
Between Sides
P
O
= 80W
f = 1GHz
V = 28V
I = 100mA
V = 28V
V = 20V
I = 10mA
V = 10V
T = 300µS
V
DS
= 0V
V = 28V
V = 28V
I
D
= 10mA
V
DS
= V
GS
V
GS
= -5V
I = 2A
1
65
Typ.
Max. Unit
V
3
1
7
mA
µA
V
mhos
pF
pF
pF
0.1
V
2.5
128
51
2.7
TOTAL DEVICE
I
DQ
= 2A
Thermal Resistance = 0.72 °C / W
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96

D2083UKG4 Related Products

D2083UKG4 D2083UK
Description RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Is it Rohs certified? conform to incompatible
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection SOURCE SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage 65 V 65 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-CDFM-F4 R-CDFM-F4
Number of components 2 2
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
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