D4SB40.......D4SB100
4.0 Amp. Glass Passivated Bridge
Plastic
Case
.118(3.0)X45
0
Voltage
400 to 1000 V
.
.147(3.7)
.130(3.3)
Current
4.0
R
.996(25.3)
.972(24.7)
.602(15.3)
.579(14.7)
.134(3.4)
.122(3.1)
.176(4.37)
.156(3.96)
.382(9.7)
.366(9.3)
.068(1.73)
.060(1.52)
.043(1.1)
.035(0.9)
.709(18)
.669(17)
.303(7.7)
.287(7.3)
Glass Passivated Junction Chips.
.030(0.75)
.022(0.55)
.087(2.2)
.071(1.8)
Mounting Instructions
High temperature soldering guaranteed: 260 ºC 10 sc.
Recommended mounting torque: 8 Kg.cm.
Lead and polarity identifications.
Case: Molded Plastic.
Ideal for printed circuit board (P
.C.B.).
High surge current capability.
The plastic material carries U/L recognition 94 V-O.
Maximum Ratings, according to IEC publication No. 134
D4SB
40
D4SB
60
600
420
D4SB
80
800
560
D4SB
100
1000
700
V
RRM
V
RMS
I
F(AV)
I
FSM
V
DIS
I
2
t
Peak recurrent reverse voltage (V)
Maximum RMS voltage (V)
Max. Average forward current with heatsink
without heatsink
10 ms. peak forward surge current
(Jedec Method)
Dielectric strength (terminals to case, AC 1 min.)
Current squared time (rating for fusing)
(1ms.<t<10ms. Tc = 25ºC)
Operating temperature range
Storage temperature range
400
280
4.0 A at 115ºC Tc.
3.0 A at 40 ºC
150 A
2000 V
110 A2sec
T
j
T
stg
V
F
I
R
R
th (j-c)
R
th (j-a)
55 to + 150 °C
55 to +150 ºC
Electrical Characteristics at Tamb = 25°C
Max. forward voltage drop per diode at I
F
= 2.0 A
I
F
= 4.0 A
Max. instantaneous reverse current at V
RRM
MAXIMUM THERMAL RESISTANCE
Junction-Case. With Heatsink.
Junction-Ambient. Without Heatsink.
1.00 V
1.10 V
5µA
5.5 ºC/W
22 ºC/W
May - 09
D4SB40.......D4SB100
Rating And Characteristic Curves
Characteristic Curves
TYPICAL FORWARD CHARACTERISTIC
FORWARD CURRENT DERATING CURVE
Tamb = 25° C
I
F (AV)
,
average forward rectified current (A)
5
4
10
I
F
,
instantaneous forward current (A)
heatsink
Tc
Tc
_
+
sine wave
R-load
on heatsink
1.0
3
2
on glass-epoxi substrate
0.1
_
+
1
P.C.B.
soldering land 5 mm ø
sine wave
R-load
free in air
0
0.6
1.0
1.4
0
0
25
50
75 100 125 150 175
Tamb, ambient temperature (°C)
V
F
, instantaneous forward voltage (V)
MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
160
I
FSM
, peak forward surge current (A)
120
80
40
0
1
10
Number of cycles at 50 Hz.
100
May - 09
Embedded System
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