D1082UK datasheet, PDF - EEWORLD Datasheet

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D1082UK: DescriptionRF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-251, TO-251, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size23KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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D1082UK Overview

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-251, TO-251, 3 PIN

D1082UK Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	70 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-251
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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TetraFET

LAB

MECHANICAL DATA

Dimensions in mm (inches)

6.35

(0.250)

0.64

(0.025)

5.33

(0.210)

0.89

(0.035)

2 pls.

SEME

D1082UK

ROHS COMPLIANT

METAL GATE RF SILICON FET

2.29

(0.090)

0.51

(0.020)

REF.

0.64

4.32

(0.170) (0.025)

7˚

± 1˚

7˚

± 1˚

7˚

± 1˚

6.10

(0.240)

1.14

(0.045)

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

4W – 28V – 200MHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND

APPLICATIONS

• LOW C

rss

• SIMPLE BIAS CIRCUITS

16.76

(0.660)

2.29

(0.090)

4.57

(0.180)

0.76

(0.030)

REF.

0.51

(0.020)

REF.

• LOW NOISE

• HIGH GAIN – 13dB MINIMUM

• SURFACE MOUNT

1.02

(0.040)

APPLICATIONS

TO–251 PACKAGE

PIN 1 – GATE

PIN 3 – SOURCE

PIN 2 – DRAIN

PIN 4 – DRAIN

•

LOW COST DC to 200 MHz

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise stated)

DSS

GSS

D(sat)

STG

Power Dissipation

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

Storage Temperature

Maximum Operating Junction Temperature

62.5W

70V

±20V

–65 to 125°C

150°C

Semelab plc.

Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk

Prelim. 7/96

D1082UK Related Products

	D1082UK	D1082UKR3
Description	RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-251, TO-251, 3 PIN	RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-251, TO-251, 3 PIN
Is it Rohs certified?	incompatible	conform to
package instruction	IN-LINE, R-PSIP-T3	TO-251, 3 PIN
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Shell connection	DRAIN	DRAIN
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	70 V	70 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-251	TO-251
JESD-30 code	R-PSIP-T3	R-PSIP-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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