D1082UKR3 datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> D1082UKR3

Preview

D1082UKR3: DescriptionRF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-251, TO-251, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size23KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

Download Datasheet Parametric Compare View All

D1082UKR3 Overview

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-251, TO-251, 3 PIN

D1082UKR3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	TO-251, 3 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	70 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-251
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

Preview

Download Datasheet

View All

TetraFET

LAB

MECHANICAL DATA

Dimensions in mm (inches)

6.35

(0.250)

0.64

(0.025)

5.33

(0.210)

0.89

(0.035)

2 pls.

SEME

D1082UK

ROHS COMPLIANT

METAL GATE RF SILICON FET

2.29

(0.090)

0.51

(0.020)

REF.

0.64

4.32

(0.170) (0.025)

4

7˚

± 1˚

7˚

± 1˚

7˚

± 1˚

6.10

(0.240)

1.14

(0.045)

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

4W – 28V – 200MHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND

APPLICATIONS

• LOW C

rss

• SIMPLE BIAS CIRCUITS

1

16.76

(0.660)

2

3

2.29

(0.090)

4.57

(0.180)

0.76

(0.030)

REF.

0.51

(0.020)

REF.

• LOW NOISE

• HIGH GAIN – 13dB MINIMUM

• SURFACE MOUNT

1.02

(0.040)

APPLICATIONS

TO–251 PACKAGE

PIN 1 – GATE

PIN 3 – SOURCE

PIN 2 – DRAIN

PIN 4 – DRAIN

•

LOW COST DC to 200 MHz

ABSOLUTE MAXIMUM RATINGS

(T

C

= 25°C unless otherwise stated)

P

D

BV

DSS

BV

GSS

I

D(sat)

T

STG

T

J

Power Dissipation

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

Storage Temperature

Maximum Operating Junction Temperature

62.5W

70V

±20V

5A

–65 to 125°C

150°C

Semelab plc.

Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk

Prelim. 7/96

D1082UKR3 Related Products

	D1082UKR3	D1082UK
Description	RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-251, TO-251, 3 PIN	RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-251, TO-251, 3 PIN
Is it Rohs certified?	conform to	incompatible
package instruction	TO-251, 3 PIN	IN-LINE, R-PSIP-T3
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Shell connection	DRAIN	DRAIN
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	70 V	70 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-251	TO-251
JESD-30 code	R-PSIP-T3	R-PSIP-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

Recommended Resources

STK0100 power amplifier circuit diagram

Stepper monostable circuit

Keyed dimming light circuit (1)

4-digit LED static display circuit with leading 0s deleted

Magnetic Balanced Current Detection Circuit

Computer motherboard circuit diagram 440LX2_33

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components