DCR1006SN2626 datasheet, PDF - EEWORLD Datasheet

DCR1006SN2626: DescriptionSilicon Controlled Rectifier, 820000mA I(T), 2500V V(DRM); CategoryAnalog mixed-signal IC Trigger device; File Size418KB，4 Pages; ManufacturerMarconi Circuit Technology Inc

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DCR1006SN2626 Overview

Silicon Controlled Rectifier, 820000mA I(T), 2500V V(DRM)

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
Nominal circuit commutation break time	350 µs
Critical rise rate of minimum off-state voltage	300 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3.5 V
Maximum leakage current	50 mA
On-state non-repetitive peak current	16400 A
Maximum on-state voltage	1.87 V
Maximum on-state current	820000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Off-state repetitive peak voltage	2500 V
surface mount	NO
Trigger device type	SCR
Base Number Matches	1

	DCR1006SN2626	DCR1006SN2828
Description	Silicon Controlled Rectifier, 820000mA I(T), 2500V V(DRM)	Silicon Controlled Rectifier, 820000mA I(T), 2700V V(DRM)
Reach Compliance Code	unknown	unknown
Nominal circuit commutation break time	350 µs	350 µs
Critical rise rate of minimum off-state voltage	300 V/us	300 V/us
Maximum DC gate trigger current	200 mA	200 mA
Maximum DC gate trigger voltage	3.5 V	3.5 V
Maximum leakage current	50 mA	50 mA
On-state non-repetitive peak current	16400 A	16400 A
Maximum on-state voltage	1.87 V	1.87 V
Maximum on-state current	820000 A	820000 A
Maximum operating temperature	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C
Off-state repetitive peak voltage	2500 V	2700 V
surface mount	NO	NO
Trigger device type	SCR	SCR
Base Number Matches	1	1

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